A Back Propagation Neural Network with Double Learning Rate for PID Controller in Phase-Shifted Full-Bridge Soft-switchi

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ORIGINAL ARTICLE

A Back Propagation Neural Network with Double Learning Rate for PID Controller in Phase‑Shifted Full‑Bridge Soft‑switching Power Supply Yan‑Ming Cheng1 · Cheng Liu1 · Jing Wu1 · He‑Miao Liu1 · Il‑Kyoo Lee2 · Jing Niu3 · Ju‑Phil Cho4 · Kyung‑Wan Koo5 · Min‑Woo Lee6 · Deok‑Gun Woo6  Received: 18 May 2020 / Revised: 29 July 2020 / Accepted: 13 August 2020 © The Korean Institute of Electrical Engineers 2020

Abstract This paper mainly focuses on the control strategy for phase-shifting full-bridge soft switching electrolytic silver power supply based on Zero Voltage Switching (ZVS) soft switching technology. Taking into consideration the low performance of traditional PID control for phase-shifting full-bridge soft-switching, this paper introduce a PID improved by Back Propagation (BP) neural network with one single learning rate which is used to calculate weights from the input layer to the hidden layer and weights from the hidden layer to the output layer. After testing, it is found that setting independent learning rate for calculation of weights from the input layer to the hidden layer and weights from the hidden layer to the output layer which will not have an adverse effect on the design of the controller. Instead, the learning rate can be set according to the respective characteristics of the weights between the two layers, which is called double learning rate BP neural network PID. The simulation results indicate that compared with the single learning rate BP neural network PID control, the double learning rate BP neural network control has higher response speed, less over-shoot, short time to enter the steady state and strong immunity. Keywords  Phase-shifting full-bridge · Soft-switching · BP neural network · Double learning rate · PID

1 Introduction Modern power electronic semiconductor switching devices are the key devices to realize power conversion. Their performance is an important factor to determine the power quality of DC/DC converters. Development of modern power electronic switching devices with low switching loss is trending toward high frequency, high efficiency and

* Deok‑Gun Woo [email protected] 1



College of Electrical and Information Engineering, Beihua University, Jilin, China

2



Division of Electrical, Electronics and Control Engineering, Kongju National University, Kongju, Korea

3

Jilin Chemical Fiber Group Co., Ltd., Jilin, China

4

Department of Integrated IT and Communication Engineering, Kunsan National University, Kunsan, Korea

5

Department of ICT Automotive Engineering, Hoseo University, Dangjin, Korea

6

IT Convergence Technology Research Lab, Seoul National University of Science and Technology, Seoul, Korea



high temperature resistance. However, with the increase of switching frequency requirement, switching loss also increases. Most of the losses of semiconductor switching devices come from their own switching losses, which are directly affected by the voltage at both ends of the switching devices and the current passing through them. When non