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Gerhard Wachutka Gabriele Schrag (eds.) Simulation of Semiconductor Processes and Devices 2004 SISPAD 2004

Springer-Verlag Wien GmbH

Or. Gerhard Wachutka Or. Gabriele Schrag Lehrstuhl fUr Technische Elektrophysik Technische Universităt MUnchen Munich, Federal Republic of Germany

This work is subject to copyright. AII rights are reserved, whether the whole or part of the material is concemed, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. Product Liability: The publisher can give no guarantee for the information contained in this book. This also refers to that on drug dosage and application thereof. In each individual case the respective user must check the accuracy of the information given by consulting other pharmaceutical literature. The use of registered names, trademarks, etc., in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. © 2004 Springer-Verlag Wien Originally published by Springer- Verlag Wien New York in 2004 Softcover reprint ofthe hardcover Ist edition 2004 springeronline.com Typesetting: Camera ready by authors Printed on acid-free and chlorine-free bleached paper SPIN 11301585

With 448 Figures and aCO-ROM

Additional material to this book can be downloaded from http://extra.springer.com

ISBN 978-3-7091-7212-4

ISBN 978-3-7091-0624-2 (eBook)

DOI 10.1007/978-3-7091-0624-2

Editorial This volume contains the proceedings of the 10lb edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The SISPAD conference is annually organized, with alternating venues in Europe, Japan, and North America. SISPAD 2002 took place in Kobe, Japan, and SISPAD 2003 was held in Boston, MA, USA. This year's SISPAD was organized by the Institute for Physics of Electrotechnology, Munich University of Technology. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology. The rapid progress made in this field necessitates continuous advances in the physical models and simulation tools, which constitute the basis for predictive simulation on all descriptive levels from atomistic models up to full system macromodels, as they are offered by state-of-the-art TCAD platforms. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster