A low-temperature limit for growth of ZnO nanowires by using of laser ablation processes
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S.I. : CURRENT STATE-OF-THE-ART IN LASER ABLATION
A low‑temperature limit for growth of ZnO nanowires by using of laser ablation processes Jaroslav Bruncko1 · Miroslav Michalka1 · Jaroslav Kovac Jr.2 · Andrej Vincze1 Received: 15 October 2019 / Accepted: 18 March 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract The contribution deals with growth of ZnO nanowires on metal catalysts by using of pulsed laser deposition and with the influence of growth temperature. The process of nanowires preparation comprised two technological steps—both were based on pulsed laser ablation processes: (1) production of metal nanoparticles by laser ablation in liquids and (2) pulsed laser deposition of ZnO nanowires by ablation of ZnO target on substrate with metal nanoparticles. Nanoparticles from various metals (Au, Ag, Ni, Cu, Al, Mg, Zn, Sn and BiSn alloy) were prepared by pulsed laser ablation at 1064 nm in deionised water. Colloids contained metal nanoparticles were applied on Si (100) substrates, and after drying, nanoparticles served as catalysts of VLS crystallisation. Temperatures in interval 600—200 °C were experimentally compared for the nanowires growth with applied ablation laser working at 248 nm. The lowest achieved temperature value for growth of ZnO nanowires was 425–450 °C. However, among applied metals Cu and Al nanoparticles only successfully catalysed ZnO nanowires at this temperature. Properties of prepared samples were investigated by scanning electron microscopy and photoluminescence. Experimental results revealed that along with the growth temperature, selection of proper metal catalyst is also important factor for nanowires crystallisation. Keywords Zinc oxide · Nanowires · Nanoparticles · Directed growth · Pulsed laser ablation
1 Introduction Semiconductor nanowires (NWs) are considered very interesting and perspective nanometre-scale structures. They can be controllably and predictably synthesised in single-crystal forms with all key parameters controlled, including chemical composition, diameter and length, doping and electronic properties, etc. Experimental and theoretical investigation of semiconductor NWs has more than 50 years long history if we consider the famous Wagner—Ellis paper [1]; however, main acceleration of published references is related to the last 10—15 years. Potential and yet successfully reported applications include wide speciality areas, for example sensors, electronic devices, photovoltaic cells, new design of * Jaroslav Bruncko [email protected] 1
Laboratory of Laser Microtechnology, International Laser Centre, Ilkovicova 3, 841 04 Bratislava, Slovakia
Faculty of Electrical Engineering and Information Technology, Institute of Photonics and Electronics, Slovak University of Technology, Bratislava, Slovakia
2
electrical batteries, water splitting cells, biological interfaces and so on [2–6]. Generally, semiconductor NWs and zinc oxide as well can be prepared by a variety of very different methods (in vapour or liquid ambient medium); howe
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