A new Apparatus for Dynamical Ion Beam Mixing
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A NEW APPARATUS FOR DYNAMICAL ION BEAM MIXING M. JAULIN, G. LAPLANCHE, J. DELAFOND Laboratoire de Mdtallurgie Physique (U.A. 131, CNRS) 40, Avenue du Recteur Pineau 86022 POITIERS (France) S. PIMBERT-MICHAUX, UNIREC B.P. 50, 42702 FIRMINY (France)
A new apparatus in
our
laboratory.
for dynamical ion beam mixing has been developed The
system
is
based
on
deposition
sputtering concurrently with ion beam implantation.
It
by
ion beam
operates under
a vacuum of 10.5 Pa before deposition and 10.3 Pa during deposition. The ion source,
with a cross section area of 45 cm2 , produces a
high current intensity (up to 250 mA) eV).
It
is
deposition, For
at low energy (a few eV to 2000
possible to use either inert or reactive
species
for the
depending on the required application. the
ion
beam
mixing,
we
use
a
classical
implantor
with
energies range from 20 to 200 keV. This materials,
technique
allows
us
to
synthesize
deposits
of
different
either from pure elements or from compounds.
We will apply this technique to develop two types of coatings titanium carbide and silicon carbide. Microstructural (TEM)
on
0.1
investigations
gm
analysis thick
by
layers
Transmission have
been
Electron
performed
Microscopy as
well
as
of the tribological behavior of 1 jum thick coatings on
steel substrate (wear tests).
1. INTRODUCTION
of
Ion implantation is a very useful technique for the modification surface properties of materials such as wear and corrosion.
However,
the small thickness of the implanted layer (about 0,1 Jim)
sputtering from the surface, implanted atoms, To
and
which impose a maximum concentration of
are the two major limitations of this process.
overcome
these
problems,
new
techniques
which
involve
ion
implantation combined with a simultaneous deposition method are being developed
(1,2,3,4,5,6).
refractory
carbides,
Now coatings are
of
of hard materials,
increasing
applications. Mat. Res. Soc. Symp. Proc. Vol. 128. 91989 Materials Research Society
interest
for
especially industrial
92
So,
in
a new piece
this paper,
thin
adherent
films
and
uses
the
technique
temperature
of
is presented.
dynamical ion beam mixing (D.I.M.)
vapor deposited from bulk
and silicon carbide films,
Titanium
that synthesizes
of apparatus low
materials by
sputtering and assisted by a high energy Ar+ ion beam,
are studied.
The tribological behavior of these films is characterized
by
tests
wear
and
their
by
microstructure
Electron
Transmission
Microscopy experiments. 2. EXPERIMENTAL PROCEDURES 2.1. The sputtering evaporator It
consists of the following points
* A vacuum system
controlled by
a diffusion
pump,
capable
of
achieving a residual pressure of 5.105 Pa when the ion source is not operating and 5.103 Pa during deposition. source
* An ion beam originally
developed
as
of Kaufman ion
type
thruster
(7)
for
(Oxford
space
instrument)
propulsion
and
optimized to obtain the highest ion beam flux for a given gas flow and
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