A Simulated Investigation of Ductile Response of GaAs in Single-Point Diamond Turning and Experimental Validation
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ORIGINAL ARTICLE
A Simulated Investigation of Ductile Response of GaAs in Single‑Point Diamond Turning and Experimental Validation Pengfei Fan1 · Fei Ding1 · Xichun Luo1 · Yongda Yan2 · Yanquan Geng2 · Yuzhang Wang2 Received: 28 June 2020 / Revised: 23 September 2020 / Accepted: 9 October 2020 / Published online: 13 November 2020 © The Author(s) 2020
Abstract In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting temperature, coordination number, and cutting forces were revealed through MD simulations. SPDT experiment was also carried out to qualitatively validate MD simulation model from the aspects of normal cutting force. The simulation results show that the fundamental reason for ductile response of GaAs during SPDT is phase transition from a perfect zinc blende structure (GaAs-I) to a rock-salt structure (GaAs-II) under high pressure. Finally, a strong anisotropic machinability of GaAs was also found through MD simulations. Keywords Molecular dynamic simulation · Single-point diamond turning · Gallium arsenide · Anisotropy · Ductile response
1 Introduction The last few years have seen a wide exploitation of singlecrystal gallium arsenide (GaAs) in photoemitter devices [1], microwave devices [2], hall elements [3], solar cells [4], wireless communications [5], as well as quantum computation [6–8] due to its superior material properties such as higher temperature resistance, and higher electronic mobility and energy gap that outperforms silicon [9–12]. Ultraprecision multiplex 2D or 3D free-form nanostructures are often required on GaAs devices, such as radio frequency power amplifiers and switches used in 5G smart mobile wireless communications [13–15]. Currently, lapping [16, 17] and chemical–mechanical polishing [18–21] have been employed to successfully fabricate planar GaAs wafers. However, they are not competent for the fabrication of 2D or 3D nanostructures. Recently, focused ion beam (FIB) machining has been used to fabricate a hemispherical cavity with highly directional emission on a GaAs workpiece
* Xichun Luo [email protected] 1
Centre for Precision Manufacturing, DMEM, University of Strathclyde, Glasgow, UK
Center for Precision Engineering, Harbin Institute of Technology, Harbin, People’s Republic of China
2
[22]. However, this approach is not viable for mass production for future commercialization due to the low material removal rate. In this regard, single-point diamond turning (SPDT) [23–28] becomes a good candidate due to its capability of mass production of 2D and 3D nanostructures with high form accuracy in a single pass. Through establishing machining parameters to meet brittle-to-ductile transition condition, some researchers [29–31] have already successfully obtained nano-smooth machined surfaces on GaAs although it is regarded as a difficult-to-machine brittle material, attributing to its low elastic modulus and fracture toughness. However, s
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