A -site Doping Effect of Multiferroic BiFeO 3 Ceramics
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A-site Doping Effect of Multiferroic BiFeO3 Ceramics Taekyung Lim∗ Department of Physics, Kyonggi University, Suwon 16227, Korea
Ok Sung Jeon,∗ Yunju La, Sang Yoon Park† and Young Joon Yoo‡ Advanced Institutes of Convergence Technology, Seoul National University, Suwon 16229, Korea
Keun-Hyeok Yang Department of Architectural Engineering, Kyonggi University, Suwon 16227, Korea (Received 30 September 2020; revised 22 October 2020; accepted 22 October 2020) The structural, magnetic and ferroelectric properties of polycrystalline A-site (A = Ho, Pr and Ce of 10%) doped BiFeO3 , which were prepared by the solid-state and rapid sintering methods, have been investigated. The powder X-ray diffraction pattern reveals that all the samples show rhombohedral perovskite structure R3c. The Ho-doped BiFeO3 shows that the magnetic property is slightly increased due to compressive lattice distortion and Ho3+ ion doping effect. For the Pr and Ce doped BiFeO3 , the remnant polarization and coercive field increased because Pr3+ and Ce3+ ions substitution suppressed oxygen vacancies. Keywords: BiFeO3 , Multiferroics, Canted spin structure, Polarization-electric curve DOI: 10.3938/jkps.77.1021
I. INTRODUCTION In the information age, people have acquired more and more information, and thus, more information has been stored. According to the trend of the times, there is a need for a work to greatly improve the capacity of memory devices. In order to develop a large-scale memory device, an integrated circuit is used to increase data storage capacity. However, since the limit of capacity that can be improved through integrated circuits is clear, studies using new methods have been suggested. As a method for maximizing the storage capacity of the device, studies on multiferroics have been actively conducted. The multiferroics refers to a material that has two or more properties at the same time, and generally refers to the case of having ferromagnetic and ferroelectric properties [1–4]. The ferromagnetic property is being divided into N - and S-poles like a magnet, and ferroelectric is a property that becomes polarized by being divided into positive (+) and negative (−) in molecule. By using the property of dividing into two states, a memory device can be made. For example, the case where the anode is on top is recognized as ‘1’ and the case where the cathode is on top is recognized as ‘0’ and information is stored. The multiferroics has many advantages as it can ∗ These
authors contributed equally to this work. [email protected] ‡ E-mail: [email protected] † E-mail:
pISSN:0374-4884/eISSN:1976-8524
use both magnetic and electric fields because it can be adjusted with either a magnetic or electric field. In addition, not only N −S pole alignment but also information storage according to the polarization state is possible, increasing storage efficiency and integration. The power consumed by generating the magnetic field in the existing memory and the resulting heat generation can be reduced, and thus the power consumption can be significantl
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