Acceptor Delta-Doping in GaAs
- PDF / 338,799 Bytes
- 6 Pages / 420.48 x 639 pts Page_size
- 85 Downloads / 242 Views
ACCEPTOR DELTA-DOPING IN GaAs
W. S. Hobson*, S. J. Pearton*, C. R. Abemathy* and G. Cabaniss** *AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ **Solecon Laboratories, San Jose CA. ABSTRACT We have investigated the formation and diffusion of delta-doped layers in GaAs employing the acceptors Zn, Cd, and C. Organometallic Vapor Phase Epitaxy was used for the growth of the Zn and Cd 5-doped layers while Metalorganic Molecular Beam Epitaxy was utilized to achieve C 5-doping. The narrowest atomic profiles for Zn had full width at half maxima of 80 X for peak Zn concentrations of < 3 x 1018 cm-3 , as measured by SIMS. An effective diffusion coefficient of _
Data Loading...
