Active Silicon Integrated Optical Circuits
- PDF / 2,770,038 Bytes
- 9 Pages / 414.72 x 648 pts Page_size
- 44 Downloads / 223 Views
BASIS OF ASOC TM TECHNOLOGY Rib-waveguide structures on silicon-on-insulator (SOI) wafers have been examined in a number of studies and have been shown to be single-mode and relatively low-loss for appropriate dimensions [1-5 ]. The physical dimensions of the rib waveguide are shown in Figure 1, together with a plot showing the transition from single- to multi-mode behavior of the waveguides, modelled using the effective index approximation. In practice, the operating point of the waveguides is chosen to be single-mode but near to the transition point to multi-mode, so that the mode is well confined. The waveguide dimensions generally used within ASOCTM technology employ silicon layer thicknesses of approximately 4.5[pm and 10ptm, with corresponding waveguide widths of approximately 4ptm and 8ptm. Waveguides based on a silicon layer thickness of 4.5ptm are a good compromise between minimizing practical waveguide bend radii and allowing waveguide tapers that match the mode at the interfaces to be formed. In the 1.3ptm and 1.55ptm telecommunications bands such waveguides have a relatively low loss of
Data Loading...
