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Tennant, Phys. Rev Lett. 52 (1984) p. 228. 40. H. Rauh, Wacker's Atlas for Characterization of Defects in Silicon (Wacker-Chemitronic Co., Burghausen, Germany). This atlas describes the categories of defects and all important preferential etches, and gives pictorial examples of defect photomicrographs. 41. H.J. Queisser and Kristallene Krisen, (Piper, Munich, 1985), English version: The Conquest of the Microchip (Harvard University Press, Cambridge, MA, 1988). 42. A very recent review describes the ubiquity of H on and in Si: GJ. Pietsch, Appl. Phys. A60 (1995) p. 347. 43. David). Eaglesham, MRS Bulletin XIX (12) (December 1994) p. 59. Hans } . Queisser studied physics in Berlin, in Lawrence, Kansas, and in Goettingen where he obtained his PhD degree. From 1959 to 1963, he witnessed the very beginning of Silicon Valley in William Shockley's small transistor company. From 1964 to 1966, he worked on GaAs materials and lasers at AT&T Bell Laboratories, then became a professor of physics in Frankfurt, Germany until 1970, when he was asked to establish the new Max-Planck Institute for Solid State Research in Stuttgart where he is still one of the directors. He is a Fellow of the American Physical Society, was president of the German Physical Society, and serves on many advisory boards. His book "The Conquest of the Microchip" (Harvard University Press) won him a medal. His field is semiconductors, especially their extrinsic properties—such as defects—and their influence on the physics of devices. Queisser can be reached at Max-Plank-lnstitut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany; phone 49711-689-1600; fax 49-711-689-1602; e-mail [email protected].

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