AlGaN-Based Bragg Reflectors
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Internet Journal of Nitride Semiconductor Research:
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AlGaN-Based Bragg Reectors O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter and M. Stutzmann MRS Internet Journal of Nitride Semiconductor Research / Volume 2 / January 1997 DOI: 10.1557/S1092578300001484, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001484 How to cite this article: O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter and M. Stutzmann (1997). AlGaN-Based Bragg Reectors . MRS Internet Journal of Nitride Semiconductor Research, 2, pp e22 doi:10.1557/S1092578300001484 Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 2, Article 22
AlGaN-Based Bragg Reflectors O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg Walter Schottky Institut, Technische Universität München N. Esser, T. Wethkamp, K. Wilmers, W. Richter Institut fuer Festkoeperphysik, Technische Universitaet Berlin M. Stutzmann Walter Schottky Institut, Technische Universität München This article was received on June 11, 1997 and accepted on August 28, 1997.
Abstract We have studied the dependence of the absorption edge and the refractive index of wurtzite Al Ga x 1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the Alx Ga1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Alx Ga1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.
1. Introduction In spite of recent successes in device development, [1], [2], [3], very little is known about the optical constants of the Alx Ga1-xN system, especially for Al contents larger than 50 %. Following a quite extensive analysis of Alx Ga 1-xN grown by molecular beam epitaxy by Yoshida et al. [4] more than a decade ago, significant improvements concerning deposition techniques and the structural quality of epitaxial films have been made, so that a critical revision of the optical constants in the AlGaN alloy system is certainly justified. A precise knowledge of optical constants is particulary important in view of the use of AlGaN films in optical filters, light-emitting and laser diodes. The fabrication of highly reflective and smooth mirrors for a horizontal cavity las
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