AlGaN/GaN Structures Grown by HVPE: Growth and Characterization
- PDF / 130,055 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 34 Downloads / 230 Views
C2.2.1
AlGaN/GaN structures grown by HVPE: growth and characterization M.A. Mastro, D.V. Tsvetkov, A.I. Pechnikov, V.A. Soukhoveev, G.H. Gainer, A. Usikov, V. Dmitriev, B.Luo1, F. Ren1, K.H. Baik2, S.J. Pearton2 Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A. 1 Department of Materials Science and Engineering; University of Florida, Gainesville, FL 32611, U.S.A. 2 Department of Chemical Engineering; University of Florida, Gainesville, FL 32611, U.S.A. ABSTRACT This letter reports on multi-layer submicron epitaxial device structures grown by hydride vapor phase epitaxy (HVPE). This is the first demonstration of both high electron mobility transistor (HEMT) devices and ultraviolet light emitting diodes (LED) emitting in the wavelength range from 305 to 340 nm based on AlGaN/GaN and AlGaN/AlGaN heterostructures grown by HVPE. Two unique aspects of this technological approach are the growth of Al-containing epitaxial material by HVPE and use of HVPE to form submicron multi-layer epitaxial structures. The high performance of HVPE grown devices presented in this report demonstrates the significant potential that exists for HVPE growth technology for mass production of device epitaxial wafers. INTRODUCTION Presently, the standard technology for manufacturing group-III nitride devices both for optoelectronic applications and high power/frequency electronic applications is metal organic chemical vapor deposition (MOCVD). HVPE is well known as a production method for device epitaxial structures for traditional compound semiconductors, however, for epitaxy of group-III nitrides, HVPE is mainly used for the growth of thick layers of GaN and GaN free-standing wafers. This paper establishes that HVPE technology has a strong potential for the fabrication of epitaxial device structures for nitride semiconductors. TDI proprietary HVPE reactors are advantageous for the deposition of nitride structures as they can deposit films over a broad growth rate range as well as for other advantages such as the ability to (1) combine in the same growth run deposition of thick low-defect layers and thin device multi-layer structures, (2) easily grow high quality AlGaN layers over the entire AlN% range. Moreover, HVPE inherently produces GaN and AlGaN films with low impurity levels as it is a carbon free process and the chemistry of HVPE results in free HCl that getters all metallic impurities. TDI has previously reported on HVPE growth of sub-micron multi-layer AlGaN-based epitaxial structures [1]. This paper reports on HVPE growth of nitride heterostructures for ultraviolet light emitting diodes and HEMT structures with a two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. Results of the material study of the AlGaN/GaN structures are described below together with characteristics of devices fabricated based on these HVPE grown structures. EXPERIMENTAL DETAILS
C2.2.2
Details of the TDI HVPE deposition system have been previously reported in other papers describing the fabricatio
Data Loading...
