All-solution-processed, highly efficient and stable green light-emitting devices based on Zn-doped CsPbBr 3 /ZnS heteroj
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All-solution-processed, highly efficient and stable green light-emitting devices based on Zndoped CsPbBr3/ZnS heterojunction quantum dots Pan Wang1, Zhihai Wu1, Manyu Wu1, Jiao Wei1, Yanni Sun1, and Zhenfu Zhao1,2,*
1
The Department of Microelectronics Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, China 2 Laboratory of Micro-Nano Devices and Systems, Ningbo University, No. 818, Fenghua road, Jiangbei district, Ningbo 315211, People’s Republic of China
Received: 24 August 2020
ABSTRACT
Accepted: 2 November 2020
The low-cost, solution-processed and stable perovskite quantum dots (QDs) light-emitting diodes (QLEDs) have great potential applications for the newgeneration displays technology and white-LEDs. The stability of perovskite QDs has been improved via polymers or inorganic encapsulation strategies, but at the cost of their semiconducting properties, so it is not suitable for active lightemitting devices. In this paper, the Zn-doped CsPbBr3/ZnS QDs heterojunction were fabricated via a simple solution-phase method, which demonstrated simultaneously enhanced the optical properties and stability of perovskite QDs films without damaging their semiconducting properties. The photoluminescence quantum yields and stability of the Zn-doped CsPbBr3/ZnS heterojunction QDs films have been significantly improved because of good surface passivation on the surface defects of perovskite QDs with ZnS nanoclusters and Zn2? doping. Finally, solution-processed n-ZnO nanoparticles (NPs) and p-NiO NPs as carrier transport layers are used to fabricate all-inorganic Zn-doped CsPbBr3/ZnS QLEDs. The QLEDs show high-efficiency green light emission with a maximum luminance of 8600 cd/m2 and external quantum efficiency of 4.8%. Moreover, the researched green perovskite QLEDs also show good working stability after a long test time in the outside environment. This study may provide an effective way for the preparation high-performance perovskite QLEDs with good environmental stability, making practical applications possible.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
Handling Editor: Pedro Camargo.
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10853-020-05527-0
J Mater Sci
Introduction All-inorganic perovskite (sPbX3, X = Cl, Br, I) quantum dots light-emitting diodes (QLEDs), considered as the ideal materials for the new-generation highquality display and solid-state lighting, have caused much attention in industry and academia due to their advantages of high PL QYs, narrow emission bandwidth, tunable emission wavelength, wide color gamut and solution-process compatibility [1–5]. The EQE of perovskite QLEDs has rapidly increased from the initial \ 1% to more than 6% for blue, 18% for green and 21.3% for red perovskite QLEDs [6–9], which can be attributed to great efforts of the surface ligand density control [10–12], surface passivation [13–15], doping or alloying engineering [16–18], interface engineering [19–21], and
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