Aluminum Nanoparticles Passivation of Multi-Crystalline Silicon Nanostructure for Solar Cells Applications
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ORIGINAL PAPER
Aluminum Nanoparticles Passivation of Multi-Crystalline Silicon Nanostructure for Solar Cells Applications A. B. Jemai 1 & A. Mannai 2 & L. Khezami 2,3 & S. Mokraoui 1 & Faisal K. Algethami 3 & A. Al-Ghyamah 1 & M. Ben Rabha 2,4,5 Received: 7 August 2019 / Accepted: 25 December 2019 # Springer Nature B.V. 2020
Abstract In this paper, we demonstrated that aluminum films deposited on the front surface of multi-crystalline silicon (mc-Si) provide excellent surface passivation and high electronic quality of such materials. A thickness of about 8 μm of aluminum films was deposited by a screen-printed on the front surface of the mc-Si annealed for 20 min at 500 °C. The immersion of multi-crystalline silicon in HF/H2O2/HNO3 after the film deposition is the key factor in achieving the high electronic quality front surface of mc-Si nanostructures (mc-Si-NS). As a result, the total reflectivity drops to about 2% and a low surface recombination velocity of about 1.5 cm s−1 was obtained. These results indicate that multi-crystalline silicon surface passivation using the aluminum layer is a valuable process to improve the efficiency of the mc-Si-NS based solar cells. Keywords Multi-crystalline silicon . Aluminum layer . Porous silicon treatment . Nanostructure . Surface treatment . Mc-Si lifetime . Silicon solar cell
1 Introduction Multi-crystalline Silicon (mc-Si) wafers, used for industrial solar cell production, customarily contain a great number of impurities and defects that adversely affect the minority carrier lifetime and consequently cell efficiency. This creates requirements in the photovoltaic (PV) industry which seeks processes that can achieve both surface and bulk passivation in mc-Si solar cells [1–6] and incorporated new techniques in silicon * A. B. Jemai [email protected] * M. Ben Rabha [email protected] 1
Department of Chemical Engineering, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
2
LaNSER, Research and Technology Centre of Energy (CRTEn), Borj Cedria Technopark, BP.95, 2050 Hammam-Lif, Tunisia
3
Department of Chemistry, College of Sciences, Imam Mohammad Ibn Saud Islamic University (IMSIU), P.O. Box 5701, Riyadh 11432, Saudi Arabia
4
LPV, Research and Technology Centre of Energy (CRTEn), Borj Cedria Technopark, BP.95, 2050 Hammam-Lif, Tunisia
5
Riyadh College of Technology, Technical and Vocational Training Corporation, P.O. Box 42826, Riyadh 11551, Saudi Arabia
solar cell fabrication [7, 8]. The firing of screen-printed aluminum pastes has been well established in the formation of a back-surface field (BSF) and back contacts for many years in silicon solar cell manufacture [9]. The idea is to use this method to form a surface of silicon doped p + which is the target of the present investigation. The first step taken is to file the aluminum layer on the surface of mc-Si. The substrate is immersed in a stripping solution (HF/HNO3/H2SO4) that eliminates the major part of the aluminum layer deposited. The result is an mc-Si doped p +
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