Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates
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0913-D01-01
Amorphization/Templated Recrystallization (ATR) Method for Hybrid Orientation Substrates K. L. Saenger1, J.P. de Souza1, K.E. Fogel1, J.A. Ott1, A. Reznicek1, C.Y. Sung1, H. Yin2, and D.K. Sadana1 1 IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598 2 IBM Semiconductor Research and Development Center, Microelectronics Division, Hopewell Junction, New York, 12533 ABSTRACT Hybrid orientation substrates make it possible to have a CMOS technology in which nFETs are on (100) Si (the Si orientation in which electron mobility is the highest) and pFETs are on (110)-oriented Si (the Si orientation in which hole mobility is the highest). This talk will describe a new amorphization/templated recrystallization (ATR) method for fabricating bulk hybrid orientation substrates. In a preferred version of this method, a silicon layer with a (110) orientation is directly bonded to a Si base substrate with a (100) orientation. Si regions selected for an orientation change are amorphized by ion implantation and then recrystallized to the (100) orientation of the base substrate. After an overview of the ATR technique and its various implementations, we will describe some of the scientifically interesting materials and integration challenges encountered while reducing it to practice. INTRODUCTION The desire for improved CMOS device performance coupled with concerns about the limits of scaling is driving renewed interest in new materials (e.g., high-k gate dielectrics and metal gates) and structural variations of old materials (e.g., hybrid orientation substrates and strained Si) for field effect transistors (FETs). Hybrid orientation substrates, generally comprising a set of first semiconductor regions with a first crystal orientation and a second set of semiconductor regions with a second crystal orientation, are of interest because they allow a CMOS technology in which nFETs are on (100) Si (the Si orientation in which electron mobility is the highest) and pFETs are on (110)-oriented Si (the Si orientation in which hole mobility is the highest). Hybrid orientation substrates have previously been fabricated with a bonding/epitaxial growth method in which regions of a bonded layer of Si having a first orientation are etched away and then replaced with epitaxially-grown Si having a second orientation matching that of the underlying Si substrate [1,2]. This paper describes an alternative amorphization/templated recrystallization (ATR) method for fabricating bulk hybrid orientation substrates [3], in which a silicon layer with a first orientation is directly bonded to a Si base substrate with a second orientation to form a direct-silicon-bonded (DSB) wafer. Regions in the bonded DSB layer selected for an orientation change are amorphized by ion implantation and then recrystallized to the orientation of the base substrate.
After illustrating the basic feasibility of the ATR method and showing examples of some simple integration schemes, we will describ
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