An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to in
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ORIGINAL ARTICLE
An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of their elements with account mismatch-induced stress: on optimization of annealing E. L. Pankratov 1,2 Received: 7 March 2020 / Accepted: 14 September 2020 # Springer-Verlag London Ltd., part of Springer Nature 2020
Abstract In this the paper, we consider an approach for increasing of density of field-effect transistors, which comprised of an enhanced swing differential Colpitts oscillator. Based on this approach, we describe manufacture of this oscillator in a heterostructure with a specialized structure. Doping of some specific regions of the considered heterostructure should be done by using diffusion type of doping or by ion type of doping. After the doping, dopant and radiation defects will be annealed by the used optimized procedure. We also will consider an approach of decreasing of mismatch-induced stress value in this heterostructure. We introduce an analytical approach for modeling of mass and heat transport in multilayer structures during manufacturing of integrated circuits taking into account mismatch-induced stress. Keywords Enhanced swing differential colpitts oscillator . Optimization of manufacturing . Increasing of density of elements
1 Introduction Currently, some actual problems of electronics of the solid state (one of them is increasing of performance of diodes, field-effect and bipolar transistors; another one is increasing of their reliability; the third problem is increasing of density of elements of integrated circuits) are intensively solving [1–7]. The performance could be increased by choosing of materials with as much as possible charge carriers mobility values [8–11]. Dimensions of integrated circuits elements could be decreased by using thin film heterostructures for manufacturing of the considered integrated circuits [3–5, 12]. Using inhomogeneity of the above heterostructures with optimization of doping [13] and improvement of epitaxial technology [14–16] gives a possibility to decrease these dimensions and at the same time to increase the performance [13]. As an * E. L. Pankratov [email protected] 1
Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod 603950, Russia
2
Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod 603950, Russia
alternative approach, which could be used to decrease these dimensions, one could be using laser or microwave types of annealing [17–19]. In this paper, we consider an approach of manufacturing of field-effect transistors in thin film heterostructures, which gives a possibility to decrease dimensions of the above transistors and at the same time to increase their density which is comprised of an enhanced swing differential Colpitts oscillator. We also described decreasing of mismatch-induced stress in the considered heterostructure. The framework the paper will consider is a heterostructure. The heterostructure consist of a substrate and an epitaxial laye
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