Anisotropic magnetoresistance and nonvolatile memory in superlattices of La 2/3 Sr 1/3 MnO 3 and antiferromagnet Sr 2 Ir
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Anisotropic magnetoresistance and nonvolatile memory in superlattices of La2/3Sr1/3MnO3 and antiferromagnet Sr2IrO4 Hui Xu1, Haoliang Huang1,2,3,4, Qingmei Wu2, Zhicheng Wang1, Zhangzhang Cui1,2,3,4,*, Xiaofang Zhai1,4, Jianlin Wang1,2,3,4, Zhengping Fu1,2,3,4, and Yalin Lu1,2,3,4,*
1
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, Anhui, China 2 Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, Anhui, China 3 Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, Anhui, China 4 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, Anhui, China
Received: 15 January 2020
ABSTRACT
Accepted: 19 March 2020
Antiferromagnets have attracted considerable interest in the field of spintronics due to their attractive characteristics such as ultrafast spin dynamics and robustness against external magnetic field perturbations. Sr2IrO4 is a rare example of antiferromagnetic semiconductor oxide and has been extensively studied in anisotropic magnetoresistance-based spintronics. However, the anisotropic magnetoresistance of Sr2IrO4 films is usually very small. Herein, we have prepared a (Sr2IrO4)4/(La2/3Sr1/3MnO3)5 superlattice which shows an enhanced anisotropic magnetoresistance compared to Sr2IrO4 film or La2/3Sr1/ 3MnO3/Sr2IrO4 heterostructure and an obvious nonvolatile memory effect that is comparable to Sr2IrO4 single crystals. Through magnetic measurements, the increased coercivity and the exchange bias at low temperatures reveal the interfacial magnetic coupling between Sr2IrO4 and La2/3Sr1/3MnO3. Additionally, the remarkable anisotropic magnetoresistance and clear hysteresis of anisotropic magnetoresistance with distinct fourfold symmetry can be controlled by temperature and magnetic field. These findings demonstrate that the superlattices of heavy transition metal oxide Sr2IrO4 are excellent platforms for antiferromagnetic spintronics.
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https://doi.org/10.1007/s10853-020-04585-8
J Mater Sci
Introduction Antiferromagnets have many fascinating physical properties, including diverse spin textures, ultrafast spin dynamics, rigidity against the external magnetic field and topologically protected states [1–6]. Recently, antiferromagnetic (AFM) spintronics has attracted more and more attention in the basic research and equipment technology [1, 2], which is expected to break through into mainstream usage as currently they just play a passive role in ferromagnetic spintronics [7–10]. AFM materials exhibit the novel anisotropic magnetoresistance (AMR) effect, which is a classical spintronic phenomenon and widely used to detect the orientation of magnetic moments in ferromagnetic (FM) materials [11]. A
