Anisotropy affects the lattice waves and phonon distributions in GaAs
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THE EUROPEAN PHYSICAL JOURNAL B
Regular Article
Anisotropy affects the lattice waves and phonon distributions in GaAs Hongzhi Fu a College of Physics and Electronic Information, Luoyang Normal College, Luoyang 471022, P.R. China
Received 16 May 2020 / Received in final form 11 August 2020 / Accepted 31 August 2020 Published online 21 October 2020 c EDP Sciences / Societ`
a Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020 Abstract. The stress-strain relationship, anisotropy, heavy- and light-hole structures, and the Phillips ionicity in GaAs are theoretically investigated by Bond matrices model as well as Zener and Every anisotropies. The results show that there is a simple correspondence between anisotropy and the extreme directions of these physical properties, i.e., [0 0 1], [1 1 0] and [1 1 1] directions. Meanwhile the lattice wave propagation, phonon focusing, and phonon distributions in GaAs are also theoretically studied in detail based on lattice-dynamical method. The slowness surface of three lattice waves are the mixing of longitudinal and transverse modes. The feature is that the lattice waves, saddle Gaussian curvatures, and caustic structures are modulated by the anisotropy. The topology in phonon distribution is discussed by the presence of caustics in the anisotropic flux of phonons emanating from a localized phonon distribution. Their topological structures show the phonon distribution and the phonon focusing. The anisotropy not only affects lattice wave propagation and phonon distribution, but influences the phonon focusing.
1 Introduction Semiconductors provide a natural means of tuning the magnitude of the band-gap energy and other material properties so as to optimize and to widen the relevance application in electronic and optoelectronic semiconductor devices [1]. Bulk GaAs is one of the famous group III-V elemental binary compounds of direct bandgap semiconductor with a zinc-blende crystal configuration [2] at ambient conditions, and is widely used in the manufacture of electronic and optical devices due to its direct band gap (an indirect gap for silicon) and high mobility (than silicon) [3]. Under hydrostatic pressure, bulk GaAs was investigated extensively and its P–T phase diagram has been reported [4]. The large second-order non-linearity coefficient of GaAs has been recently exploited in meta-surfaces of nanocylinders by the second harmonic generation [5,6]. Thermoelectric transport properties of GaAs, InP, and PbTe are theoretically investigated by Hybrid functional Az method [7]. Due to the different effective masses of the heavy, light, and split-off holes, these exciton states [8] are energetically split when a quantum confinement is applied. The dispersion relation of p–n heterojunction is derived theoretically and is applied to GaAs based p–n junction [9]. Semiconductor nanowires possess very many attractive properties for structural applications [10–14], although a particular feature of the formation of structural polytypes a
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