Annealing Behavior of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient
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Annealing behavior of locally confined dislocation loops under inert and oxidizing ambient C. Tsamis, D. Skarlatos, I. Raptis, D. Tsoukalas, P. Calvo1, B. Colombeau1, F. Cristiano2 and A. Claverie1 IMEL/NCSR “Demokritos”, Terma Patriarchou Grigoriou, P.O.BOX 60228, 15310 Aghia Paraskevi, Athens, Greece 1 CEMES/CNRS, 29 rue J. Marvig, BP 4347 31055 Toulouse cedex 4, France 2 LAAS/CNRS, 7 av. Col. Roche, 31077 Toulouse, France ABSTRACT In this work, we report data for the growth kinetics of locally confined dislocation loops organized within lines of controlled dimension and periodicity. The dislocation loop lines were formed in the crystalline substrate after local Si implantation and annealing in predefined areas. The distance between the lines ranges between 0.2 µm to 5 µm. It is shown that the kinetics of the DLs depends on the distance between them. When the distance is less than 1 µm, the DLs behave in a similar fashion like those grown in a continuous layer, under inert and oxidizing conditions. However, when the distance between the lines is increased (eg. 5 µm), the behavior of the loops is changed. Fast dissolution of the dislocations loops is observed during annealing in inert ambient, due to enhanced interstitial losses, while under oxidizing conditions the loops grow faster. INTRODUCTION Dislocation loops are two dimensional extended defects, formed in the silicon crystal after annealing of an amorphizing implant. The interaction of point defects with the dislocation loops is of general interest for front-end Si processing technology, since their presence in specific areas of modern semiconductor devices strongly influences the device performance. For that reason systematic study has been done over the past years, in order to determine the physical mechanisms that underlie the defect formation [1,2] and their influence on phenomena such as the Transient Enhanced diffusion (TED ) of dopants [3]. On the other hand, DLs have been used as point defect detectors to study point defect injection processes and to extract point defect parameters in silicon [4-8]. In that case their use has been proven a very efficient technique since a continuous dislocation loop layer can absorb up to 85 % of the silicon interstitials that are generated during surface oxidation [9]. Another interesting situation is the study of the growth kinetics of dislocation loops when the defects are formed locally in silicon areas. In that case the growth kinetics of the defect might be influenced from the limited dimensions of the area where the loops are grown, both under oxidizing and under inert conditions. The behavior of the defects under such conditions would be much more representative of the situation encountered during S/D formation in a real device. Moreover, locally confined dislocation loops, in the form of lines or boxes, could be used to monitor twodimensional distribution of silicon interstitials during local oxidation of silicon. In this work, we report data for the growth kinetics of dislocation loops organized within the
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