Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections
Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the applic
- PDF / 5,561,165 Bytes
- 154 Pages / 439.37 x 666.142 pts Page_size
- 121 Downloads / 236 Views
For further volumes: http://www.springer.com/series/6917
Cher Ming Tan Zhenghao Gan Wei Li Yuejin Hou
Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections
123
Dr. Cher Ming Tan School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore e-mail: [email protected] Dr. Zhenghao Gan Technology Research and Development Semiconductor Manufacturing International (Shanghai) Corporation (SMIC) 18 Zhangjiang Road Pudong New Area 201203 Shanghai People’s Republic of China e-mail: [email protected]; [email protected]
Dr. Wei Li Singapore Institute of Manufacturing Technology 71 Nanyang Drive Singapore 638075 Singapore e-mail: [email protected] Dr. Yuejin Hou #10-226 BLK156 11 Hougang Street Singapore 530156 Singapore e-mail: [email protected]
ISSN 1614-7839 ISBN 978-0-85729-309-1
e-ISBN 978-0-85729-310-7
DOI 10.1007/978-0-85729-310-7 Springer London Dordrecht Heidelberg New York British Library Cataloguing in Publication Data A catalogue record for this book is available from the British Library Ó Springer-Verlag London Limited 2011 Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licenses issued by the Copyright Licensing Agency. Enquiries concerning reproduction outside those terms should be sent to the publishers. The use of registered names, trademarks, etc., in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant laws and regulations and therefore free for general use. The publisher makes no representation, express or implied, with regard to the accuracy of the information contained in this book and cannot accept any legal responsibility or liability for any errors or omissions that may be made. Cover design: eStudio Calamar, Berlin/Figueres Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1 Electromigration (EM) Modeling Review . . . . . . . . . . . . . . 2.1.1 One-Dimensional (1D) Analytical Modeling. . . . . . . 2.1.2 Two-Dimensional (2D) Modeling . . . . . . . . . . . . . . 2.1.3 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2 Review on the Modeling of the Stress-Induced Voiding (SIV) 2.2.1 Thermo-mechanical Stress Modeling . . . . . .
Data Loading...
