Atomic and Electronic Structures of a-SiN x :H
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ONIC PROPERTIES OF SOLID
Atomic and Electronic Structures of a-SiNx:H V. A. Gritsenkoa,b,c, V. N. Kruchinina, I. P. Prosvirind, Yu. N. Novikova, A. Chine, and V. A. Volodina,b,* a Rzhanov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia b Novosibirsk State University, Novosibirsk, 630090 Russia c Novosibirsk State Technical University, Novosibirsk, 630073 Russia d Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia e National Chiao Tung University, Hsinchu, Taiwan 300, ROC *e-mail: [email protected] Received February 15, 2019; revised March 26, 2019; accepted April 11, 2019
Abstract—The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them. DOI: 10.1134/S1063776119080132
1. INTRODUCTION Amorphous silicon nitride (a-Si3N4) is one of the most widely used insulators in micro- and nanoelectronics [1, 2]. Its important properties is the shape memory effect, i.e., the ability to retain the electron and holes trapped in it for ten years at a temperature up to 85°C, and this property is applied in nonvolatile memory devices [3]. Nonstoichiometric amorphous silicon nitride (a-SiNx, 0 < x < 4/3), which is also called silicon rich nitride (SRN), is of particular interest [4–6]. Researchers now try to create new a-SiNxbased memory elements (memristors) [7], including neural nets based on a-Si3N4 memristor arrays [8]. The a-SiNx compound with silicon nanoclusters can also be applied in light-emitting diodes [9]. For example, the authors of [10] created a light-emitting memory element based on SRN with silicon clusters. A change in the stoichiometric composition (parameter x) of a-SiNx is known to change its optical and electrical properties over wide limits [11–13]. It is very important to know the atomic structure and the electronic spectrum of a-SiNx to reveal conduction mechanisms and the mechanisms of switching between high- and low-resistance states. For this purpose, researchers use both experimental investigations (mainly X-ray photoelectron spectroscopy (XPS)) and quantum-chemical calculations [4]. To simulate the electronic transport in a-SiNx, one has to known
the band gap in the amorphous material. Since it is difficult to apply el
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