Au-assisted Growth of Indium Antimonide Nanowires by Chemical Vapor Deposition: Temperature and Growth Duration Effects
- PDF / 4,942,261 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 81 Downloads / 273 Views
Au-assisted Growth of Indium Antimonide Nanowires by Chemical Vapor Deposition: Temperature and Growth Duration Effects Jiebin Zhong1, Jian Lin1, Miroslav Penchev2, Mihrimah Ozkan2 and Cengiz S. Ozkan1 1 Department of Mechanical Engineering, University of California Riverside, 900 University Ave.,Riverside, California 92521, USA 2 Department of Electrical Engineering, University of California Riverside, 900 University Ave.,Riverside, California 92521, USA ABSTRACT In this paper, we investigate the morphology variation of Au-assisted epitaxial InSb nanowires (NWs) dependence on growth temperature and growth duration by chemical vapor deposition (CVD). The NW length and tapering factor correlated to the NW morphology are determined as a function of growth temperature (300°C-480°C). Higher density and longer NWs were observed on the substrate as proportional to the growth duration. The growth direction of the NWs is by Transmission Electron Microscopy (TEM) studies. The aim of this study is to gain better understanding of the III-V NWs growth mechanism and achieve control over the growth of InSb NWs. INTRODUCTION One-dimensional (1D) semiconductor nanowires have been received a great deal of attention due to their merits on both fundamental and applied fields [1-3]. It has been mentioned that precise controlled growth of NWs, like NW dimension, morphology, growth direction, and composition, is essential from the viewpoints of fundamental material synthesis process and applications [4-6]. As a compound III–V semiconductor material, indium antimonide (InSb) has been attracted considerable interests due to its direct narrow band gap (0.17 eV at 300K), high bulk electron mobility (77000 cm2/(V*s) (300 K) and low effective mass. Therefore, InSb NW is an ideal candidate for high-speed electronic devices [7], infrared detectors [8], magnetoresistors [9] and potential to push the miniaturization of electronic and optoelectronic devices. Although InSb NWs have been synthesized using different epitaxy methods such as molecular organic vapor phase epitaxy (MOVPE), chemical beam epitaxy (CBE), molecular beam epitaxy (MBE), and simple chemical vapor deposition (CVD) [10-13], the results vary among different groups. Compared with other III-V materials, literatures regarding the growth of InSb NWs are still limited. Furthermore, detailed responsible growth mechanisms for semiconductor NWs is controversial [13-15] and still not clearly understood for InSb NWs[11]. The NW morphology is mainly affected by different axial and radial growths at different conditions via different atoms kinetics [16, 17], including (A) the direct impingement of growth specie atoms through the catalytic particle, (B) the 2D layer deposition on the substrate, (C) the diffusion of adatoms from the substrate surface towards the catalyst along the NW sidewalls, (D) the direct deposition on the NW sidewalls from the vapor source, and (E) the material desorption from the NW. It has been theoretically and experimentally reported that growth temperature makes an imp
Data Loading...
