CdS x Te 1 - x Alloying in CdS/CdTe Solar Cells
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CdSxTe1-x Alloying in CdS/CdTe Solar Cells Joel N. Duenow, Ramesh G. Dhere, Helio R. Moutinho, Bobby To, Joel W. Pankow, Darius Kuciauskas, and Timothy A. Gessert National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 ABSTRACT A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thinfilm CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdSxTe1-x films of lower S content (x
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