Characterization of Bi 2 Se 3 prepared by electrodeposition
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ORIGINAL PAPER
Characterization of Bi2Se3 prepared by electrodeposition M. Khadiri 1
&
M. Elyaagoubi 2 & R. Idouhli 1 & M. Mabrouki 3 & A. Abouelfida 1 & A. Outzourhit 2
Received: 13 June 2020 / Revised: 25 July 2020 / Accepted: 13 August 2020 # Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Bi2Se3 compound was deposited catholically under potential control, from a mixture solution composed from equimolar SeO2 and BiCl3. The concentration of selenium and bismuth precursors was about 5 ∙ 10−3 M. The electrodeposited films were grown on FTO substrates (Transparent Conductive Glass Fluorine-Doped Tin Oxide (FTO)– Coated Glass). Deposition potential was determined from cyclic voltammetry (CV) where the platinum mesh was taken as working electrode. The growth kinetics depends on the applied potential. It was found, using EDS technique, that suitable ratio of Se/Bi corresponding to Bi2Se3 was reached at − 250 mV vs. SCE (saturated calomel electrode). X-ray and grazing X-ray diffraction revealed that the obtained film at − 250 and − 200 mV/SCE consisted a rhombohedral Bi2Se3 structure. Raman shift was employed to corroborate the X-ray results with the possibility of formation of a rhombohedral Bi2Se3 when the applied potential was − 200 mV (vs. SCE). The Bi2Se3-obtained films were an n-type semiconductor with a carrier charge concentration which depends on the applied potential. Keywords Bi2Se3 . Cyclic voltammetry . Electrodeposition . Nucleation . Thin films
Introduction Groups V–VI thin-film semiconductors based on sulfides, selenides, and tellurides have a narrow band gap. Among them, the bismuth selenide (Bi2Se3) is a direct gap semiconductor, and the gap energy noted Eg ranges from 0.16 to 0.35 eV [1]. Bismuth selenide has been widely studied because of its non-toxicity [2] and its potential applications in medical [3], photovoltaic [4], infrared, and gas detection [5], and in thermoelectric and optoelectronic devices applications fields [6–8]. Bismuth selenide (Bi2Se3) has a rhombohedral crystal structure, integrated in a hexagonal lattice which allows * M. Khadiri [email protected] 1
Applied Chemistry and Biomass Laboratory Department of Chemistry, Faculty of Science Semlalia, University Cadi Ayyad, BP 2390, Morocco, Morocco
2
Laboratory of Nanomaterials for Energy and the Environment (LN2E), Faculty of Sciences Semlalia Marrakech, Cadi Ayyad University, BP 2390, Marrakech, Morocco
3
Laboratory of Industrial Engineering Beni-Mellal TSF, BP 523, 23000 Marrakech, Morocco
to highlight the stacking of atomic layers, corresponding to the basic quintet of the structure: Se(1)-Bi-Se(2)-BiSe(1) [9]. The different atomic layers of the sequence are arranged perpendicularly to the ternary axis of the rhombohedral mesh, which is also the c axis of the hexagonal mesh. However, under particular preparation conditions, the orthorhombic phase may appear [10, 11]. Several techniques can be used to obtain Bi2Se3 thin films, namely exfoliation [8], radio frequency sputtering [12, 13], hydrothermal met
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