Characterization of LPE-Ga 0.86 In 0.14 As 0.13 Sb 0.87
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Characterization of LPE-Ga0.86In0.14As0.13Sb0.87 J. Díaz-Reyes1, J. S. Arias-Cerón2, J. G. Mendoza-Álvarez3, J. L. Herrera-Pérez4 1
Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional. ExHacienda de San Juan Molino Km. 1.5. Tepetitla, Tlaxcala. 90700. México. 2 Catedrático CONACYT, Depto. de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. AP. 14-740. México City. 07000. México. 3 Depto de Física, CINVESTAV-IPN. AP. 14-740. México City. 07000. México. 4 UPIITA, Instituto Politécnico Nacional. Av. Instituto Politécnico Nacional 2580, Barrio La Laguna, Ticomán. México City. 07340. México. Email: [email protected]
ABSTRACT Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration. INTRODUCTION The development of middle-infrared (2–5 Pm) lasers utilizing III–V compounds has been encouraged by the extensive scope for using these devices for diode laser spectroscopy and ecological monitoring [1]. These applications require lasers operating at room temperature. So far, the maximum operating temperature of infrared lasers fabricated using InAs solid solutions by various methods such as liquid-phase and molecular beam epitaxy and growth from metalorganic compounds and emitting in the 3–4 Pm wavelength range, has not exceeded 180–200 K with pulsed pumping and 110 K with cw pumping [2]. The main factors limiting the operation of long wavelength lasers at room temperature are non-radiative Auger recombination and carrier leakage across the hetero-boundary as a result of poor electron and hole confinement. The majority of works on semiconductor hetero-structures has been done on the systems with type I band alignment. In structures of this kind, the valence and conduction bands of the narrow gap material are nested within the band gap of other material. Now, however, more and more attention is paid to staggered line-up, or type II, systems. In 2883 Downloaded from https://www.cambridge.org/core. Cornell University Library, on 12 Nov 2017 at 14:29:05, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/adv.2017.523
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