Characterization of Stress and Texture in Rtcvd Poly-Si Layers by X-Ray Diffraction
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CHARACTERIZATION OF STRESS AND TEXTURE IN RTCVD POLY-SI LAYERS BY X-RAY DIFFRACTION
ISTVAN BARSONYl. JOS G.E. KLAPPE2 AND TOM W. RYAN
3
"" University 1 2
of Twente, MESA Research Institute, P.O.Box 217, 7500 AE Enschede, The Netherlands, Philips Analytical, Lelyweg 1, 7602 EA Almelo, The Netherlands. on leave from the Technical University of Budapest, Budapest, Hungary
ABSTRACT
The properties of polycrystalline silicon layers deposited by RTCVD have been studied by texture, stress and electrical analyse. The intrinsic layers intended for applications in integrated IC processing are very much textured with the preferred orientation depending on deposition temperature and atmosphere. Very low residual film stress in the order of 10 dyn/cm was detected, and a transition from compressive to tensile stress with increasing deposition temperature around 800 0 C was observed. This was associated with the development of the columnar structure by the (110) orientation becoming dominant at the expense of the (100) texture. Also the effect of post-deposition anneal ambience on the grain structure has been studied. Grain size and grain-boundary trapping in after doped layers have been evaluated in P-implanted RTA activated layers. INTRODUCTION Advanced IC processing and micromechanical sensor technology require the reproducible fabrication of polycrystalline silicon layers with well-controlled mechanical and electrical properties. The uniformity and stability of the grain structure is essential in applications of these layers as doping sources in poly-Si emitter stacks and also in double-poly MOS structures as thermally oxidized gate material [1]. One of the promising methods to achieve this goal on wafers of increasing diameters is Rapid Thermal Chemical Vapor Deposition by the pyrolysis of silane [2,3,41. Despite the well-known pyrometer temperature-control difficulties encountered with T
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