Characterization of TiN Films Prepared by Ion Beam Assisted Deposition
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CHARACTERIZATION OF TiN FILMS PREPARED BY ION BEAM ASSISTED DEPOSITION ALBERT L. CHANG* AND R. A. KANT** *Westinghouse Electric Corp., P. 0. Box 185, Boston, MA 02258 **Naval Research Laboratory, Washington, D.C. 20375
ABSTRACT One of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.
INTRODUCTION The ion beam assisted deposition (IBAD) process combines the conventional ion implantation with simultaneous vapor deposition (or with simultaneous sputtering) to produce a surface coating with beneficial properties and comparable microstructures offered by the conventional ion implantation process. Unlike conventional ion implantation, the IBAD process is capable of producing films several microns in thickness while a typical 100 KV ion implantator usually produces a modified surface layer with -100 nm in thickness. Since the stoichiometry and the microstructure of the IBAD coating are independent of those of the substrate material, this process offers the potential of applying protective coatings on a wide variety of engineering materials for various tribological environments so long as the film offers desirable properties and it is highly adherent to the substrate. Recent work at NRL [1-3] demonstrated that low-friction-highly-adherent ductile TiN films on a 52100 steel substrate can be obtained by the IBAD process using 30 KV nitrogen ions with simultaneous Ti evaporation. Baglin [4] at IBM indicated that the adhesion of the metal-ceramic interface was enhanced dramatically by simultaneous ion bombardment of 500 eV argon ions during vapor deposition of metal films on ceramic substrates. This work suggested that high energy ions (greater than, say, 10 KV) were not necessary to produce highly adherent IBAD films on substrates. It will be highly desirable if the excellent properties of the IBAD films, prepared by using the higher energy (30 KV) ion beam, can be produced by using the lower energy (1 KV) ion beam, leading to a significant reduction in processing cost. The current study intends to investigate the effects of ion energy (using 30 KV and 1 KV nitrogen ions) and the ion-to-atom arrival ratio on the microstructure and the tribological performance of the IBAD films. This paper summarizes the results of the microstructural characterization of the IBAD films. EXPERIMENTAL For the 30 KV nitrogen ion IBAD process, a Varian Implantor was used as the ion source
Mat. Res. Soc. Symp. Proc. Vol. 128.
g1989 Materials Research Society
434
which was attached to a specimen chamber with an electron-beam evaporator inside. For the 1 KV nitrogen ion IBAD process, a 3 cm diameter Kaufman ion gun was used with the same evaporator. The ion-to-atom arrival ra
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