Charge Transport Across the Interface
Quantum-mechanical calculations of electron transport in semiconductor devices can be based on several formulations, among which are eigenfunctions of the Schrödinger equation, the density matrix [3], an approximate diagonalized density matrix, or the Wig
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3 General Interface Model
Charge Transport Across the Interface
in a zero-order approximation. Within this theory, knowledge of the bandgap ~ and "midgap energy" WB of the involved materials suffices to predict the band discontinuities. Respective tables of material parameters can be found e.g. in [47]. Many developers of device simulators (sometimes tacitly) choose the potential origin such that the electrostatic potential
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