Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride
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ge Transport Mechanism in a Formless Memristor Based on Silicon Nitride O. M. Orlova, b, *, A. A. Gismatulinc, d, e, V. A. Gritsenkoc, d, e, and D. S. Mizginova, b, ** a
Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460 Russia Institute of Physics and Technology, Dolgoprudny, Moscow oblast, 141701 Russia c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia dNovosibirsk State University, Novosibirsk, 630090 Russia e Novosibirsk State Technical University, Novosibirsk, 630073 Russia *e-mail: [email protected] **e-mail: [email protected] bMoscow
Received March 13, 2020; revised April 1, 2020; accepted April 1, 2020
Abstract—Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of silicon nitride over other dielectrics is that silicon nitride is compatible with silicon technology. Despite numerous studies, the mechanism of charge transfer in the storage elements of resistive memory based on silicon nitride is still not clear. It is required to study in detail the mechanism of charge transfer in a memristor based on silicon nitride in order to further improve the cell information storage element and create a matrix of these elements. Metal–nitride–oxide–silicon (MNOS) structures that exhibit memristor properties are obtained using chemical vapor deposition at low pressure at 700°C. The fabricated structure of the resistive memory storage element based on metal–nitride–oxide–silicon does not require a molding procedure. In addition, such a memristor has a memory window of about five orders of magnitude. We establish that the main mechanism of charge transfer in the MNOS memristor in the high-resistance state is the current model with a limited spatial charge of the traps. In a low resistance state, the charge transfer mechanism is described by the current model with a limited spatial charge with filled traps. The trap’s parameters are determined in a memristor based on silicon nitride in a high-resistance state. DOI: 10.1134/S1063739720050078
INTRODUCTION Silica (SiO2) and silicon nitride (Si3N4) form the base of silicon–metal–oxide–semiconductor (SMOS) technology [1]. Unlike silicon oxide, silicon nitride has a high concentration of electron traps and is widely used as a storage medium for the bound charge on traps in flash memory based on the structure of tantalum nitride–alumina–nitride–oxide–silicon (TaN– Al2O3–Si3N4–SiO2–Si, TANOS) [2]. Currently, resistive random access memory (Re RAM), memristor resistive memory, is being developed for the nonvolatile memory (NVM) of the next generation after flash memory (Flash) [3]. It should be noted that Re RAM, together with the phase change memory (PCM), magnetoresistive random access memory (MRAM), and ferroelectric memory (Fe RAM) [4], is a popular type of nonvolatile memory on new alternative principles compared to memory based of charge storage. The principle of operation of the memristor is based on switching the dielectric active medium between
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