Charged Semiconductor Defects Structure, Thermodynamics and Diffusio
The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their b
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		    Series Editor Professor Brian Derby, Professor of Materials Science Manchester Materials Science Centre, Grosvenor Street, Manchester, M1 7HS, UK
 
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 Modeling of Metal Forming and Machining Processes P.M. Dixit and U.S. Dixit
 
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 Materials for Information Technology E. Zschech, C. Whelan and T. Mikolajick
 
 Edmund G. Seebauer • Meredith C. Kratzer
 
 Charged Semiconductor Defects Structure, Thermodynamics and Diffusion
 
 123
 
 Edmund G. Seebauer, BS, PhD Meredith C. Kratzer, BS, MS University of Illinois at Urbana-Champaign Department of Chemical and Biomolecular Engineering 600 S. Mathews Avenue Urbana, Illinois 61801-3792 USA
 
 ISBN 978-1-84882-058-6
 
 e-ISBN 978-1-84882-059-3
 
 DOI 10.1007/978-1-84882-059-3 Engineering Materials and Processes ISSN 1619-0181 A catalogue record for this book is available from the British Library Library of Congress Control Number: 2008936490 © 2009 Springer-Verlag London Limited Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licences issued by the Copyright Licensing Agency. Enquiries concerning reproduction outside those terms should be sent to the publishers. The use of registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant laws and regulations and therefore free for general use. The publisher makes no representation, express or implied, with regard to the accuracy of the information contained in this book and cannot accept any legal responsibility or liability for any errors or omissions that may be made. Cover design: eStudio Calamar S.L., Girona,		
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