Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor
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CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE USING A NOVEL ORGANOMETALLIC PRECURSOR WEI LEE , LEONARD V.
INTERRANTE ,
AND BING-XI SUN KLAUS LENZ * Departments of Chemistry
CORRINA **
and
Polytechnic Institute, Troy, NY
CZEKAJ ,
Materials
JOHN
HUDSON
Engineering,
Rensselaer
12180-3590.
ABSTRACT Dense silicon carbide films have been prepared by low pressure chemical vapor
deposition
precursor,
(LPCVD)
using
a
MeHSiCH2 SiCH2Me(CH2 SiMeH2 ).
volatile,
heterocyclic,
carbosilane
At deposition temperatures
between
0
700 and 800 C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy
and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(lO0) substrates are discussed.
INTRODUCTION The chemical vapor deposition (CVD) of silicon carbide has a long history of development and successful application [1]. However, the full potential of this material, and the CVD method for its generation, has not been realized, in part due to the extreme temperatures (>10000C) and exacting conditions required by the existing approaches. In particular, its large band gap, high-temperature stability, high thermal conductivity, high breakdown electric field, and high electron saturation velocity make it an attractive candidate for use as a high temperature, radiation-resistant semiconductor [2-5]. Similarily, its hardness, oxidation and corrosion resistance suggest a wide range of potential applications for protective, abrasion and corrosion resistant coatings. One of the problems associated with the use of SiC for such applications is the fact that it can exist in a variety of crystalline modifications and is difficult to obtain as a single-phase material in high compositional purity. Another major problem is the high temperature which is generally required to obtain high-quality SiC by the existing CVD methods. Silicon carbide thin films of widely varying composition and morphology have been prepared by a range of chemical vapor deposition techniques [1]. These are usually based on the pyrolysis of mixtures of silicon and carbon containing compounds, such as SiCl with CCl HSiCl 3with C H14' or SiH4 with C3 H .
Single-component SiC precursors,
such as CH3SiCl3, have also been
employed. These processes are generally carried out at atmospheric pressure. A carrier gas, such as H2 , He, Ar, or N2 is generally used, with H2 often needed for the complete removal of chlorine as HCl. Deposition temperatures range from 800 to 18000 C, with temperatures greater than 12000C being optimal. The high deposition temperatures associated with these CVD processes This can often promote the decomposition and/or reaction of the substrate. Mat. Res. Soc. Symp. Proc. Vol. 131. 01989 Materials Rese
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