Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications
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1165-M08-25
Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications J.G. Garza1, S. Shaji1,2, A.M. Arato1,2, E. Perez-Tijerina2,3, A. C. Rodriguez1, T. K. Das Roy1 and B. Krishnan1,2 Facultad de Ingenieria Mecanica y Electrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, Mexico. 2 CIIDIT- Universidad Autónoma de Nuevo León, Apodaca, Nuevo León, Mexico. 3 Facultad de Ciencias Físico Matemáticas, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, Mexico.
ABSTRACT Silver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300390oC in vacuum (∼10-3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 o C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp. INTRODUCTION Silver antimony selenide (AgSbSe2) belongs to I-V-VI2 group compound semiconductors having optical absorption coefficient of 104 cm-1 with a band gap of ~1 eV [1], and hole mobility of 1500 cm2/V-s[1], offering its applications as photovoltaic absorber material. Various methods were reported for the preparation of this material [2-5]. A photovoltaic structure using this material as absorber layer, Glass/SnO2:F-CdS-Sb2S3-AgSbSe2-Ag showed Voc = 530 mV and Jsc = 1.7 mA/cm2 [5]. In this case, AgSbSe2 thin film was formed by annealing of Sb2S3-Ag layers in contact with chemical bath deposited selenium thin film under nitrogen atmosphere. Preparation of CdS/AgSbSe2 PV structure by all-chemical bath deposition process using sequentially deposited CdS/Sb2S3/Ag2Se thin films on SnO2:F coated glass substrate in contact with selenium thin film [6] was reported. In the present work, we report the formation of AgSbSe2 thin films by heating a multilayer of Sb2S3/Ag2Se/Ag in contact with a selenium thin film in vacuum. Further, by varying the selenium thickness, AgSb(S,Se)2 phase was formed. Structure and morphology of these thin films were analyzed using X-ray diffract
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