Closing Remarks
Present day knowledge on epitaxy, the physical background of this important crystallization technique, as well as its implementation, have been presented in this book in a concise form. The authors idea was to make this presentation clear enough and suffi
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Present day knowledge on epitaxy, the physical background of this important crystallization technique, as well as its implementation, have been presented in this book in a concise form. The authors idea was to make this presentation clear enough and sufficiently complete to convince the reader that epitaxy, with its modifications related to different materials systems, is still the basis for further development of already known, very sophisticatcd microelectronic device technology. Epitaxy has in the past decade made vital contributions in at least three areas of the technology of microelectronic devices. The first is closely related to MBE, in which the URV environment and the therefore available electron based surface sensitive techniques enabled effective in situ control over the growth process at the atomic level in real time. A similar control was later achieved by optical methods for the VPE techniques especially MOVPE. The second is related to, so-called, surface technology, which enabled the preparation of substrate and thin film surfaces with specified orientation, reconstruction, and composition, which are in addition effectively damage free. The third, and by far the most widely exploited area, is related to heteroepitaxy, which is at present the technology of sophisticated heterostructures and quantum well structures with ID, 2D and 3D quantization. The experimental and theoretical data presented in this book allow one to conclude that epitaxy is certainly still an open and very broad subject of intensive scientific investigations. This conclusion mainly concerns aspects of epitaxy, which exhibit great application prospects. As examples, let us mention here: (i) atomic-scale control of growth processes in gas-phase as well as in liquid- or solid-phase epitaxy by submonolayer sensitive, noninvasive, real-time monitoring techniques, (ii) self-assembling processes during epitaxy as a way to monolithic integration of microelectronic or optoelectronic devices, (iii) growth of large-scale functional matrix structures for addressed applications, e.g., large lighting panels for billboards or illumination panels, by applying in sequence different epitaxial growth techniques, e.g., LPE, VPE and MBE, for different materials systems, e.g., semiconductors, dielectrics or/and metals. The epitaxial growth process is basically the very first and decisive in the manufacturing process of a device. Therefore an increasing number of proM. A. Herman et al., Epitaxy © Springer-Verlag Berlin Heidelberg 2004
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16. Closing Remarks
duction systems is equipped with surface sensitive characterization techniques which are used for calibrating, monitoring and controlling the growth process, replacing in that way conventional time-consuming post-growth analysis methods. Among the noninvasive techniques, optical methods will become more and more important, because of their high content of information concerning growth rate and temperature, surface morphology and composition and doping efficiency in real time during growth, which
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