Contribution and Control of Coherent Phonons
This chapter estimates the value of the Huang–Rhys factor , which is a parameter representing the coupling strength between electron–hole pairs and phonons. Furthermore, the origin of the sidebands described in Chaps. 2 and 3 is described. Finally, how
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Motoichi Ohtsu
Silicon Light-Emitting Diodes and Lasers Photon Breeding Devices using Dressed Photons
Nano-Optics and Nanophotonics Editor-in-Chief Motoichi Ohtsu, Tokyo, Japan Editorial Board Sonia Contera, Oxford, United Kingdom Ariando, Singapore, Singapore Chennupati Jagadish, Canberra, Australia Fedor Jelezko, Ulm, Germany Gilles Lerondel, Troyes, France Dipankar Das Sarma, Bengaluru, India Hitoshi Tabata, Tokyo, Japan Peidong Yang, Berkeley, USA Gyu-Chul Yi, Seoul, South Korea
The Springer Series in Nano-Optics and Nanophotonics provides an expanding selection of research monographs in the area of nano-optics and nanophotonics, science- and technology-based on optical interactions of matter in the nanoscale and related topics of contemporary interest. With this broad coverage of topics, the series is of use to all research scientists, engineers and graduate students who need up-to-date reference books. The editors encourage prospective authors to correspond with them in advance of submitting a manuscript. Submission of manuscripts should be made to the editor-in-chief, one of the editors or to Springer.
More information about this series at http://www.springer.com/series/8765
Motoichi Ohtsu
Silicon Light-Emitting Diodes and Lasers Photon Breeding Devices using Dressed Photons
123
Motoichi Ohtsu Graduate School of Engineering The University of Tokyo Tokyo Japan
ISSN 2192-1970 Nano-Optics and Nanophotonics ISBN 978-3-319-42012-7 DOI 10.1007/978-3-319-42014-1
ISSN 2192-1989
(electronic)
ISBN 978-3-319-42014-1
(eBook)
Library of Congress Control Number: 2016945786 © Springer International Publishing Switzerland 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG Switzerland
Preface
This book, entitled Silicon Light Emitting Diodes and Lasers, reviews the use of an indirect transition-type semiconductor to constru
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