Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
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Xinyu Liu Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
Sergei Rouvimov Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
Leonardo Basile Departamento de Física, Escuela Politécnica Nacional, Quito 170525, Ecuador; and Oak Ridge National Laboratory, Center of Nanophase Materials Sciences, Oak Ridge, Tennessee 37831, USA
Ning Lu and Angelica Azcatl Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75083, USA
Katrina Magno Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
Robert M. Wallace and Moon Kim Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75083, USA
Juan-Carlos Idrobo Center of Nanophase Materials Sciences, Oak Ridge, Tennessee 37831, USA
Jacek K. Furdyna Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
Debdeep Jena and Huili Grace Xingb) School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA; Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA; and Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA (Received 11 October 2015; accepted 23 November 2015)
Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2. Reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.
I. INTRODUCTION 1
Discovery of graphene led to renewed interest in layered transition metal dichalcogenides (TMDs) like MoS2, ReSe2, WSe2 and MoTe2 as well as post-TMDs like InSe, GaSe, and SnSe2 (Refs. 2–5) for electronic as well as optical devices. Quasi-two dimensional (2D) materials like Bi2Te3, Bi2Te3, and Sb2Te3 are of great Contributing Editor: Jeremy T. Robinson Address all correspondence to these authors. a) e-mail: [email protected] b) e-mail: [email protected] DOI: 10.1557/jmr.2015.374 900
J. Mater. Res., Vol. 31, No. 7, Apr 14, 2016
http://journals.cambridge.org
Downloaded: 26 Jul 2016
scientific interest as topological insulators as well as thermoelectric materials.6,7 Recently, there has been an enormous number of reports of optical and electronic devices involving different 2D materials and their heterostructures either exfoliated8–11 or
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