Coordinate Systems and Systems of Equation

A device simulator for nanoscale strained SiGe double gate PMOSFETs based on the self-consistent solution of the 1D SE, 2D PE, and multi subband 1D BTE is developed, which is applicable for arbitrary crystallographic orientations and arbitrary channel dir

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Edited by

Siegfried Selberherr Technical University Vienna Vienna, Austria

For further volumes: www.springer.com/series/1263

Sung-Min Hong Anh-Tuan Pham Christoph Jungemann

Deterministic Solvers for the Boltzmann Transport Equation

Sung-Min Hong Device Laboratory Samsung Information Systems America, Inc. 75 West Plumeria Drive San Jose, CA 95134 USA [email protected]

Anh-Tuan Pham Institut f¨ur Elektronische Bauelemente und Schaltungstechnik TU Braunschweig Postfach 3329 38023 Braunschweig Germany [email protected]

Christoph Jungemann Institut f¨ur Theoretische Elektrotechnik RWTH Aachen University Templergraben 55 52056 Aachen, Germany [email protected]

This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. Product Liability: The publisher can give no guarantee for all the information contained in this book. The use of registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. c 2011 Springer-Verlag/Wien  SpringerWienNewYork is a part of Springer Science+Business Media springer.at Cover: WMXDesign GmbH, Heidelberg, Germany Typesetting: SPi, Chennai, India Printed on acid-free and chlorine-free bleached paper SPIN 80062049 With 124 Figures Library of Congress Control Number: 2011934251 ISBN 978-3-7091-0777-5 e-ISBN 978-3-7091-0778-2 DOI 10.1007/978-3-7091-0778-2 SpringerWienNewYork

Preface

In this book the research of the last decade by the authors regarding deterministic solvers for the Boltzmann transport equation is summarized. The work was started by the third author, who was interested in electronic noise of semiconductor devices. At first glance the use of a deterministic solver seems to be strange, because all groups working at that time on noise in devices solved the Boltzmann transport equation with the stochastic Monte Carlo method, which inherently contains noise and was regarded as the best method to do so. But it soon became clear that the Monte Carlo method, which is also inherently transient, was too slow to calculate noise in the technically relevant frequency range with sufficient accuracy. A deterministic solver on the other hand could yield truly stationary solutions, and exact small-signal analysis could be performed directly in the frequency domain covering the full frequency range. Unfortunately, the deterministic solvers have not only advantages compared to the Monte Carlo method but also disadvantages. The biggest obstacle in the application of deterministic solvers was the huge memory requirement (about 100 GBytes for a realistic 2D device simulation including noise), which is by orders of magnitude larger than the one of the Monte Carlo method. This is the r