Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD
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CORRELATION OF STRESS WITH PHOTO-DEGRADATION IN HYDROGENATED AMORPHOUS SILICON PREPARED BY HOT-WIRE CVD DAXING HAN*, TAMIHIRO GOTOH**, MOTOI NISHIO**, TOMONARI SAKAMOTO**, SHUICHI NONOMURA**, SHOJI NITTA**, QI WANG***, EUGENE IWANICZKO*, * Dept of Physics & Astronomy, Univ of North Carolina, Chapel Hill, NC 27599-3255, USA ** Dept of ECE, Gifu Univ, 1-1 Yanagido, Gifu 501-11, JAPAN *** National Renewable Energy Laboratory, Golden, CO 80401, USA. ABSTRACT An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 'C the hydrogen content decreases from 8 to
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