Crystallization Behaviour of Amorphous Si 0.5 Ge 0.5 Films Observed by Positron Annihilation

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parameters S and W. S relates to the relative fraction of counts in the center of the Dopplerbroadened annihilation spectrum (511±0.8 keV), W is the relative fraction of counts in the wings of the spectrum (2.76 keV< IE--511 keVk