CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping
- PDF / 253,352 Bytes
- 5 Pages / 432 x 648 pts Page_size
- 67 Downloads / 157 Views
CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping
Yukako Kato1, Hitoshi Umezawa1, Hirotaka Yamaguchi2, Tokuyuki Teraji3, Shin-ichi Shikata1 1 Diamond Research Laboratory, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan 2 Nanoelectronics Research Institute, Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan 3 National Institute for Material Science, Tsukuba 305-0047, Japan
ABSTRACT Semiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of mixed dislocations is observed by the analysis by using the birefringence image, cathodoluminescence image and xray topography. INTRODUCTION Semiconductor diamond has attracted much attention as the power device material is able to perform in the high breakdown characteristic with the high carrier mobility. Because of its several material characters, it is expected that the diamond power device which is performing in a high-temperature and high-voltage environment. The Baliga's figure of merit (BFOM) is used for the comparison of power device material property [1]. When it is normalized to Si, BFOM of diamond is 44000. It is much higher than BFOM of SiC, 640 [2]. Recently, Umezawa et al. has reported that the development of diamond Schottky barrier diode and high temperature characteristics [3-4]. For the practical application of the diamond power device, it should be analyzed about the factors of the stability behavior with the high performance. One of the factors is crystal defect. The relationship of the defect and device property has been discussed by several research groups. They suggest that the high-quality crystal with flat surface and low defect density is required [5-7]. In the case of general single crystal CVD diamond, the defect density is about 104/cm2 [7]. Although it is necessary that the reduction of the defect density for the achievement of the diamond device application, there is not established standard defect analysis method as the defect study of SiC device [8]. In this paper, it is shown that our first suggestion of the established standard defect analysis method of CVD diamond. Discussed defect is limited to dislocations as SiC study and nondestructive analyses are employed because the discussed
73
dislocation is analysis by various methods. Analyzed data are as follows: the birefringence image, cathodoluminescence (CL) image and x-ray topography.
EXPERIMENT The measured sample is the epitaxial CVD diamond (001) single crystal on Ib type HPHT diamond single crystal. The sam
Data Loading...
