Dependence of laser parameters on structural properties of pulsed laser-deposited MoS 2 thin films applicable for field
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Dependence of laser parameters on structural properties of pulsed laser-deposited MoS2 thin films applicable for field effect transistors Jianfeng Xi1,*
, Xiaowei Huang2,3, Minghao Hu2,3, and Wenfeng Xiang2,3
1
Department of Physics, Beijing Technology and Business University, Beijing 100048, People’s Republic of China Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum, Beijing 102249, People’s Republic of China 3 College of New Energy and Materials, China University of Petroleum, Beijing 102249, People’s Republic of China 2
Received: 26 March 2020
ABSTRACT
Accepted: 7 October 2020
The pulsed laser deposition (PLD) technique can be efficient and cost-effective in the fabrication of high-quality MoS2 thin films. The laser pulse parameters, such as the number of pulses, the pulse energy density, and the frequency, that influence the MoS2 thin films quality have been investigated. The optimum parameters of laser pulse for the best crystalline quality MoS2 films were determined by experiments. Back-gated field effect transistors (FETs) were fabricated based on the MoS2 thin film. The carrier mobility of the MoS2 backgated FETs has reached 4.63 cm2 V-1 S-1. The responsivity of the MoS2 backgated FETs is approximately 0.06 AW-1 at drain voltage of - 2 V. These results show that the back-gated FETs based on MoS2 thin films prepared by PLD can be applied to photodetectors.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Two-dimensional materials such as graphene, MoS2, WS2, MoSe2, and GaSe have attracted tremendous technological and scientific interest in recent years due to their remarkable mechanical, electronic, and optical properties which are absent in their bulk counterparts [1–4]. Unlike graphene, the band gap of transition metal dichalcogenides (TMD) can be tuned from direct to indirect by simply varying the number of layers [5–7]. Nowadays, MoS2, being one of the most intensively studied TMD materials, received
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https://doi.org/10.1007/s10854-020-04624-9
remarkable consideration. Owing to the extraordinary layer-dependent bandgap behavior, MoS2 is considered a promising candidate to overcome the shortages belonging to zero-bandgap graphene, providing a possible solution for electronic applications, such as field effect transistors (FETs) [8], phototransistors [9], solar cells [10], and sensors [11]. In previous study, multilayer MoS2 transistors were synthesized by a top-down growth technique, which showed a normally on accumulation mode characteristics with an electron mobility of [ 80 cm2/Vs and an on/off ratio of [ 105 [12]. Flexible
J Mater Sci: Mater Electron
photodetectors of MoS2 were fabricated by chemical vapor deposition (CVD), and the responsivity is 570 A/W at 642 nm [13]. Monolayer and multilayer MoS2 also can be produced by mechanical exfoliation with excellent quality, which have been successfully used for sensing NO gas [14]. Some of the fabricati
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