Dip Coated Indium Oxide Films and Their Optical Constants
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00202-2
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Dip Coated Indium Oxide Films and Their Optical Constants G. Ramanathan1 · K. R. Murali2 Received: 31 December 2019 / Revised: 14 April 2020 / Accepted: 30 April 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract Metal oxide play very important role in the field of semiconductors. Metals have high reflectivity for the light radiation in the range of infrared and visible range and low reflectivity in the ultraviolet and higher frequency range. Indium oxide thin films were successfully deposited by the sol gel dip coating method. The envelope method was used to evaluate the optical parameters and thickness. Resistivity, mobility and carrier concentration were obtained from Hall measurements. The dispersion energy was obtained from the single effective oscillator model. The energy band gap values estimated from Tauc’s plot and the static refractive index estimated from the Cauchy’s curve fitting agree well with single effective oscillator model. Optical characteristics of materials are determined by the interaction of the electromagnetic radiation with the valence electron of the materials which lies within or near visible range of electromagnetic spectrum. The other optical parameters like optical conductivity and the dielectric constants were also evaluated. Keywords Indium oxide · Optical properties · UV–visible spectroscopy · Refractive index · Dielectric constant
1 Introduction This paper mainly focuses on the optical behaviour of Indium (III) oxide semiconducting material. Indium oxide (IO) has a wide band gap (3.4–3.75 eV) of semiconductor and also it has excellent binding energy, electrical and optical properties. At present Indium oxide is used in many fields such as solar cells, flat panel display, and photodiode, liquid crystal display, anti reflecting coating, opto electronic and electro chromic device [1–3]. Most commonly used methods for the deposition of IO films are Chemical Vapour Deposition (CVD) and Physical Vapour Deposition (PVD) [4–9] etc. Most of these methods are expensive and need for high vacuum and hence as the alternative low cost tool, sol gel dip coating method was employed. Recently sol gel prepared films have attracted the attention in electronic and sensor application, hence in this work, Indium oxide films were deposited by the sol gel Acrylamide route. After the sample preparation some basic characterizations were * G. Ramanathan [email protected] 1
Department of Physics, Sri Sairam Engineering College, Sai Leo Nagar, Chennai 600 044, India
Department of Theoretical Physics, University of Madras, Chennai 600 000, India
2
done by using XRD, XPS, AFM and EDXA, which confirm the stoichiometric Indium oxide with cubic structure (already reported in previous papers [10, 11]). UV visible analyzer was employed for estimating the forbidden gap. The Wemple DiDominico model was used to estimate the dispersion parameters
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