Direct synthesis of ultra-thin large area transition metal dichalcogenides and their heterostructures on stretchable pol
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Travis E. Shelton, John E. Bultman, Jianjun Hu, Michael L. Jespersen, Maneesh K. Gupta, and Rachel D. Naguy Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA; and University of Dayton Research Institute, Dayton, Ohio 45469, USA
Jennifer G. Colborn Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA; and Department of Mechanical Engineering, University of Dayton, Dayton, Ohio 45469, USA
Aman Haque Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, USA
Phillip T. Hagerty, Randall E. Stevenson, and Christopher Muratorea) Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469, USA; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA (Received 8 October 2015; accepted 6 January 2016)
A scalable approach for synthesis of ultra-thin (,10 nm) transition metal dichalcogenides (TMD) films on stretchable polymeric materials is presented. Specifically, magnetron sputtering from pure TMD targets, such as MoS2 and WS2, was used for growth of amorphous precursor films at room temperature on polydimethylsiloxane substrates. Stacks of different TMD films were grown upon each other and integrated with optically transparent insulating layers such as boron nitride. These precursor films were subsequently laser annealed to form high quality, few-layer crystalline TMDs. This combination of sputtering and laser annealing is commercially scalable and lends itself well to patterning. Analysis by Raman spectroscopy, scanning probe, optical, and transmission electron microscopy, and x-ray photoelectron spectroscopy confirm our assertions and illustrate annealing mechanisms. Electrical properties of simple devices built on flexible substrates are correlated to annealing processes. This new approach is a significant step toward commercial-scale stretchable 2D heterostructured nanoelectronic devices.
I. INTRODUCTION
Two dimensional (2D) materials possess a unique combination of electronic and mechanical properties enabling the next generation of electronic devices such as wearable sensors and electronics.1 Molecularly thin molybdenum disulfide (MoS2) is a promising 2D semiconductor due to Contributing Editor: Joshua Robinson a) Address all correspondence to this author. e-mail: [email protected] b) Current Affiliation: Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, USA c) This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs. org/jmr-editor-manuscripts/. A previous error in this article has been corrected, see10.1557/jmr.2016.129. DOI: 10.1557/jmr.2016.36
its relatively high charge mobility2 and a direct band gap of 1.8 eV (Refs. 3 and 4) coupled with optical transparency and extreme mechanical flex
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