Doping of boron or nitrogen to multilayered graphene grown on copper by thermal chemical vapor deposition of methane and
- PDF / 1,168,415 Bytes
- 6 Pages / 432 x 648 pts Page_size
- 81 Downloads / 206 Views
MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.26
Doping of boron or nitrogen to multilayered graphene grown on copper by thermal chemical vapor deposition of methane and vapor of phenylboronic acid or melamine Ryoko Furukawa, Yuno Yamamoto, Yoji Nabei and Shunji Bandow Department of Applied Chemistry, Meijo University, 1-501 Shiogamaguchi, Tenpaku, Nagoya, Aichi 4688502, Japan
Abstract
Either boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ~0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5~12 at% and 1~2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.
Introduction Doping of heteroatoms to the graphene is one of the interesting subject to modify the electronic and chemical properties. Especially the substitutional doping, such as nitrogen, boron, phosphorus, sulphur and combination of them, would tailor the π or π* band of graphene acting as either electron donor or acceptor. Since the π and π* bands of graphene touch at the K point in the Brillouin zone [1], graphene is a zero gap semimetal with the electronic density of states (DOS) at Fermi level zero. Hence the charge transfer from the dopant crucially modifies the electronic properties of pristine graphene. Substitution of heteroatom in the graphene network is classified into several sites, such as graphitic and several types of doping accompanying atomic defect. Although there are lots of papers published for N-doped graphene [2-7] and B-doped one [8-11] until now, single site doped graphene is still difficult to synthesize. In the present
Downloaded from https://www.cambridge.org/core. Iowa State University Library, on 03 Feb 2019 at 01:15:50, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/adv.2019.26
study, we try to draw a simple guide line for making single site doped graphene by changing the experimental conditions of supplying rate of chemicals that including doping element and growth temperature of graphene. Experimental Doping method of B/or N to graphene Preparation of graphene was based on the thermal chemical vapor deposition (CVD) of methane on copper. Methane (from a PR gas: 10% CH4 in Ar) was used for the carbon 1. Schematic of CVD apparatus for the doping of B/or N to graphene. source, and the dopant was Figure Phenylboronic acid was used for B doping and melamine for N doping. supplied from the vapor of Temperature of B/or N source was controlled between 120 an
Data Loading...
