Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector
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Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector
Z.C. Liu, F.N. Li, W. Wang, J.W. Zhang, F. Lin and H.X. Wang Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiao Tong University, Xi'an, Shaanxi, China, 710049 Abstract The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-high-temperature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm. Introduction Thanks to the wide band-gap, high carrier mobility, radiation hardness and thermal stability, diamond is an extraordinary candidate for ultraviolet (UV) photodetector [1]. The performance of diamond photodetector is dependent on film quality and device design [2]. Early researches were focused on chemical vapor deposition (CVD) polycrystalline diamond film [1-4]. However, UV photodetectors on polycrystalline diamond film is difficult to meet 5S requirements [5], and the most sensitive diamond UV photodetectors could be obtained by using single crystal diamond [6]. Thus single crystal diamond UV photodetector have been extensively investigated [7-9]. As for device design, many efforts have been done [1, 2, 9]. Recently, three dimensional electrode structures have been applied in diamond radiation detectors [10, 11]. Laser-processed three dimensional graphitic electrodes was fabricated in diamond layer for radiation detectors, demonstrating an electrically active and a higher efficiency of charge collection [10]. Another group reported that metal strip electrodes constructed in diamond could increase the charge collection efficiency [11]. However, there are few reports on UV photodetectors with three dimensional structures. Since the UV light penetrates into diamond for a certain depth [12], the effect of the depth of three dimensional electrodes on photodetector properties is necessary to be investigated. In this report, buried-in three dimensional electrodes have been applied to single crystal diamond photodetectors and the effect of the depth of the electrodes on the performance of photodetectors has been investigated.
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Experimental Details About 1 μm thick single crystal diamond epitaxial layer was grown on 3×3×0.3 mm3 Ib-type high-pressure-high-temperature diamond substrate by microwave plasma chemical vapor
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