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EFFECT OF FAST ELECTRON IRRADIATION ON ELECTRICAL AND OPTICAL PROPERTIES OF CdGeAs2 AND ZnGeP2 I. ZWIEBACK', J. MAFFETONE', D. PERLOV*, J. HARPER', W. RUDERMAN', K. BACHMANN', N. DIETZ** 'INRAD Inc., Northvale, NJ "*North Carolina State University, Raleigh, NC ABSTRACT We report on the effects of fast electron irradiation on the optical absorption (a) of CdGeAs2 and ZnGeP 2 and on the electrical properties of CdGeAs2 . In p-CdGeAs 2 irradiation led to the reduction in a and an increase in the electrical resistivity. The lowest values of a (about 0.1 cm' at 5ptm

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