Effect of firing temperature on microstructure and dielectric properties of chromium oxide based glass composite thick f
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Effect of firing temperature on microstructure and dielectric properties of chromium oxide based glass composite thick films on stainless steel substrate Ghanasham D. Shirke1 · Govind G. Umarji1 · Arjun R. Tarale2 · Vikas L. Mathe2 · Uttam P. Mulik1 · Sunit B. Rane1 Received: 12 March 2018 / Accepted: 31 March 2018 © Springer Science+Business Media, LLC, part of Springer Nature 2018
Abstract We report the influence of firing temperature on A l2O3–chromium oxide based ( Cr2O3–Bi2O3–B2O3–SiO2–Al2O3) glass composite (named as GC-1 composite) thick films of thickness (27 ± 3) µm deposited onto 0.6 mm thick austenitic grade stainless steel (DIN 1.4301/AISI 304) substrate by screen printing technique, which can be used as a substitute to alumina substrate. Prior to formulation of glass composite, the chromium oxide based glass (named as GC-1) phase was prepared separately by melt-quench technique. X-ray diffraction analysis confirmed amorphous nature of the GC-1 glass. The thermo gravimetric analysis and differential scanning calorimetry of the GC-1 glass shows thermal stability over the temperature range of 20–1000 °C. We observed that the firing temperature significantly influences microstructural and dielectric properties of the GC-1 composite film. The deposited GC-1 composite films onto stainless steel base were fired at temperatures between the range of 550–750 °C, showed the surface resistivity in the range of (1.0–6.9 ± 0.2) × 1012 ohms per square. The microstructure of these composite films recorded using scanning electron microscopy and electrical properties recorded using LCR meter were correlated with each other. The study revealed that the film fired at 600 °C were found to be superior among the samples under investigation in terms of microstructure, stable relative permittivity [36 (± 1)] and low loss tangent [0.02 (± 0.002)] in frequency range of 1–200 kHz, and surface resistivity (~ 5.1 × 1012 ohms per square).
1 Introduction The need for compaction in electronic devices has attracted enormous research attention and led to development in the area of microelectronic devices as well as hybrid circuits and sensors [1–20]. For these developments to occur, the insulating dielectric media with required variation in the property plays a significant role [1–3, 8–20]. Even in modern era of electronic technology, thick film techniques remain a key process in fabrication of various electronic components and circuits, sensors circuits and their miniaturization. Until now in thick film technology, alumina is preferred as a substrate for most of the applications viz. conductors, resistors, sensors to monolithic hybrid circuits due to its appreciable * Sunit B. Rane [email protected] 1
Centre for Materials for Electronics Technology (C-MET), Off Pashan Road, Pune 411008, India
Department of Physics, Savitribai Phule Pune University, Pune, 411007, India
2
chemical stability and physical properties [1–7]. Various attempts have been made to replace alumina substrate by metallic or metal alloy substrates
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