Effect of Mn Content on Structural Evolution and Magnetic Properties of ZnO Particles
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REVIEW
Effect of Mn Content on Structural Evolution and Magnetic Properties of ZnO Particles Jian Xue 1 & Huying Yan 1 & Wenbin Liu 1 & Tingdong Zhou 1 & Xinwei Zhao 1 Received: 16 June 2020 / Accepted: 14 October 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract ZnO dilute magnetic semiconductor (DMS) is one of the most promising materials for room temperature ferromagnetic applications. In this paper, Zn1-xMnxO (x = 0.00, 0.03, 0.06, and 0.09) samples were prepared through Mn-doped ZnO by using sol-gel method. And the intrinsic relationship between the point defects and magnetic properties were investigated. The hexagonal wurtzite structure of ZnO was confirmed by X-ray diffraction (XRD) measurement in all prepared samples. The morphological features of prepared samples were studied by scanning electron microscopy (SEM). The distribution of Mn element was analyzed by energy dispersive X-ray analysis (EDAX). The number of oxygen vacancies (Vo) is varied with increasing Mn content by Xray photoelectron spectroscopy (XPS). A suitable Vo density in Zn1-xMnxO (x = 0.03) samples is considered to be important and has positive effect on the ferromagnetism. Magnetic properties were tested by vibrating sample magnetometer (VSM). The antiferromagnetism exchange interaction between Mn ions is the main reason to cause the diamagnetic properties. Keywords Diluted magnetic semiconductor . ZnO . Point defect . Magnetic properties . Sol-gel method
1 Introduction In the past decades, as the processing technology of traditional microelectronic devices is approaching to the physical performance limit of materials, it restricts the daily increasing requirement of modern industry [1]. In the twentieth century, dilute magnetic semiconductor (DMS) materials have been improved with the development of spin electronics [2]. Due to DMSs are expected to utilize the spin characteristics of electrons to store information, this field has been concerned by many scholars [3–6]. It is proved that DMSs have high spin injection efficiency and can be directly compatible with traditional semiconductor processing [7]. ZnO, with high exciton
Electronic supplementary material The online version of this article (https://doi.org/10.1007/s10948-020-05721-w) contains supplementary material, which is available to authorized users. * Tingdong Zhou [email protected] 1
School of Materials Science and Engineering, Xihua University, Chengdu 610039, China
binding energy (60 meV), is a direct and wide band gap (3.37 eV) semiconductor. And, it possesses excellent chemical and physical properties. Hence, ZnO semiconductor material is one of the most promising materials for the preparation of spin-polarized carrier sources. Because Mn (3d5) has the maximum unpaired electrons, it becomes the most important doping element in recent years [8]. Hence, Mn-doped ZnO system has paid attention to many scholars and became a hot research topic gradually. In addition, the prepared Mn-doped ZnO samples exhibited usually one kind of magnetic pr
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