Effect of silicon substrate type on Nb 2 O 5 /Si device performance: an answer depends on physical analysis
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Effect of silicon substrate type on Nb2O5/Si device performance: an answer depends on physical analysis Evan T. Salim1 · Jehan A. Saimon1 · Marwa K. Abood1,2 · Makram A. Fakhri3,4 Received: 5 March 2020 / Accepted: 6 October 2020 / Published online: 14 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract b2O5 thin This work presents the deposition of N b2O5 on p and n type silicon substrate. N film was deposited using precipitation method for solution preparation, and employing spin coating technique for film deposition, where optimum preparation condition were achieved in our previous published article. The electrical characteristic shows a good rectification ratio of about 46.7 for the Nb2O5/p-Si junction and 4.9 for Nb2O5/n-Si. The estimated ideality factors of n- and p-type Si found to be 5.17 and 3.84 respectively. The maximum detectivity was obtained using P-Si substrate and found to be about 6.2 × 1012 cm Hz1/2 W−1. Keywords Detector parameters · Nb2O5/Si · Substrate conductivity effects
1 Introduction Extended potentials have been developed to improve a number of nanostructure-established nanodevices, such as photo detectors (Wang et al. 2010; Abood et al. 2019; AlDouri et al. 2018a), field-effect transistors (Ahn et al. 2005), and light emission diodes (Huang et al. 2005; Salim et al. 2016, 2019) photodetectors, which are among the most important semiconductor devices currently available, transform optical signals into electrical ones and are widely implemented in binary switches for imaging, remembrance store, light communication, and optoelectronic loops (Xia et al. 2009; Fang et al. 2011). Various metal-oxide thin films are widely used in optical and microelectronic applications. Nb2O5 is the most stable form among niobium oxides and shows great promise for optical and
* Makram A. Fakhri [email protected]; [email protected]
Evan T. Salim [email protected]; [email protected]
1
Applied Science Department, University of Technology, Baghdad 10066, Iraq
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Energy and Renewable Energies Technology Center, University of Technology, Baghdad, Iraq
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Laser and Optoelectronic Engineering Department, University of Technology, Baghdad 10066, Iraq
4
Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia
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electronic applications. For example, Nb2O5-based thin films are utilized as a rise index and depressed loss materials (Halboos and Salim 2018; Fakhri et al. 2017; Chen et al. 2016; Baltes et al. 2001). However, in the later years, it’s fascinating semiconducting characteristics and the coming of additional experienced mechanisms of production permitted the gaining a planned way of new systems like highly porous materials, so soft powders and coatings (Al-Douri et al. 2018b; Rani et al. 2014; Fakhri 2016; Hattab and Fakhry 2012; Aegerter et al. 2002). Various techniques, such as spin coating (Abood et al. 2018; Sal
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