Effect of substrate type on RF magnetron sputtered CuInS 2 thin films properties based on nanoparticles synthesized by s
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Effect of substrate type on RF magnetron sputtered CuInS2 thin films properties based on nanoparticles synthesized by solvothermal route Faouzi Ghribi1,4 · Lassaad El Mir Mabrouk1 · K. Djessas2 · Ştefan Ţălu3 Received: 11 May 2020 / Accepted: 14 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Stereometric and fractal analyses have been performed on the three-dimensional surface microtexture of the sputtered copper indium disulfide films on various substrates. The target used in the sputtering was made from nanoparticles synthesized by the solvothermal route. The effects of substrate on structural and morphological properties of the films were investigated. The obtained C uInS2 films were polycrystalline textured, preferentially oriented in (112) crystallographic direction. Also, the (112) peak intensity changes with the substrate type. From atomic force microscopy (AFM) analysis, it can be concluded that the growth of the film on molybdenum substrate is promising for photovoltaic applications particularly as absorber layer in solar cells. The surface microtexture characterization in terms of surface dimensions, volume, curvature, shape was analyzed according to ISO 25,178–2: 2012 standard. Keywords CuInS2 · Nanoparticles · Solvothermal technique · RF magnetron sputtering · Solar cells · Stereometric analysis · Surface microtexture · Thin films
1 Introduction Ternary chalcogenide semiconductive materials of I–III–VI2-type have attracted much attention because of their excellent optical and electrical properties and important applications in linear and nonlinear optical devices and photovoltaic solar cells [1]. Within this family, chalcopyrite semiconductor CuInS2 is considered as one of the * Faouzi Ghribi [email protected]‑gabes.tn 1
Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Faculty of Sciences in Gabes, Gabes University, 6072 Gabes, Tunisia
2
Laboratoire de Procédés, Mathématiques Et Energie Solaire (PROMES‑CNRS), Université de Perpignan, Rambla de la thermodynaque, Technosud, 66100 Perpignan Cedex, France
3
Technical University of Cluj-Napoca, The Directorate of Research, Development and Innovation Management (DMCDI), 15 Constantin Daicoviciu St, 400020 Cluj‑Napoca, Cluj County, Romania
4
National Engineering School of Gabes, University of Gabès Member in the Laboratory of Physics of Materials and Nanomaterials Applied To the Environment, University of Gabes (LaPhymne), BP 193 El Hamma, 6020 Gabés, Tunisia
most promising candidates for the application in thin-film solar cells, thanks to its high absorption coefficient of about 105 cm−1 and ideal band gap energy of 1.53 eV, which are closely matched to the visible part of the solar spectrum application [1]. There are various techniques for the preparation of C uInS2 thin films, such as co-evaporation [1], molecular beam epitaxy [2], sputtering [3–5], spray pyrolysis [6, 7], chemical vapor deposition (CVD) [8], and chemical bath deposition [9]. In
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