Effect of the Nanoparticles on the Structure and Crystallization of Amorphous Silicon Thin Films Produced by rf Glow Dis
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rticles on the Structure and Crystallization of Amorphous Silicon Thin Films Produced by rf Glow Discharge E. Bertran, S. N. Sharma, G. Viera, J. Costa, P. St'ahel and P. Roca i Cabarrocas Journal of Materials Research / Volume 13 / Issue 09 / 1998, pp 2476 2479 DOI: 10.1557/JMR.1998.0347
Link to this article: http://journals.cambridge.org/abstract_S0884291400045830 How to cite this article: E. Bertran, S. N. Sharma, G. Viera, J. Costa, P. St'ahel and P. Roca i Cabarrocas (1998). Effect of the Nanoparticles on the Structure and Crystallization of Amorphous Silicon Thin Films Produced by rf Glow Discharge. Journal of Materials Research,13, pp 24762479 doi:10.1557/JMR.1998.0347 Request Permissions : Click here
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Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge E. Bertran, S. N. Sharma, and G. Viera Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain
J. Costa Departament d’Enginyeria Industrial, Universitat de Girona, Av. Lluis Santal´o S/N, E 17071 Girona, Spain
P. St’ahel and P. Roca i Cabarrocas Laboratoire de Physique des Interfaces et des Couches Minces (CNRS, UPR 258), Ecole Polytechnique, F-91128 Palaiseau Cedex, France (Received 12 August 1997; accepted 20 November 1997)
Thin films of nanostructured silicon (ns-Si : H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 ±C substrate temperature using a silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy, and x-ray diffraction, which have shown the presence of ordered silicon clusters (1–2 nm) embedded in an amorphous silicon matrix. Because of the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.
I. INTRODUCTION
Plasma technology is used to produce thin films for microelectronics, and increasing interest has emerged in determining and controlling the effects of particles during the plasma processes. Since the work of Spears et al.1 on particles in rf discharge of silane, particles ranging from 10 nm to several tens of nm have been reported in different processes: etching,2 sputtering,3 and plasma enhanced chemical vapor deposition (PECVD).4 The microelectronics industry is concerned that the general trend of reduction of the device dimensions may be limited by the particle contamination from the plasma process itself. Nowadays, the undesirable role of the particles during the plasma processing has been questioned because the new properties found in silicon powders5,6 and in the silicon films7 grown in the presence of particles can b
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