Effects of High D.C. Hias Voltage on the Properties of Diamond-Like Carbon Films
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0956-J09-01
Effects of High D.C. Hias Voltage on the Properties of Diamond-Like Carbon Films Boqian Yang, Hongxin Zhang, Xinpeng Wang, and Xianping Feng Physics department, University of Puerto Rico, San Juan, 00931, Puerto Rico Abstract Diamond-like carbon (DLC) films were synthesized using pulsed plasma sputtering deposition techniques. Microscope and Raman scattering techniques were used to study the effects of bias voltages on the properties of diamond-like carbon films. With d.c. bias voltage up to 1000V, the smooth and thick DLC films together with a few nanoparticles were obtained. An increase of the d.c. bias voltage up to 2000V yielded thicker DLC films but the surface of films became slightly rough and size of particles became large. The crystalline properties of these particles were studied. Keywords: bias voltage, plasma sputtering deposition, diamond-like carbon films, Raman scattering spectra
Introduction Diamond-like carbon films (DLC) [1] are a promising material for protective coating [2, 3], and have been studied for many years based on various techniques including physical vapor deposition [4, 5, 6], chemical vapor deposition [7, 8], and pulsed laser deposition techniques [9, 10]. The focus of recent research is on the study of effects such as bias voltage [11], substrate temperature [12], and gas pressure [13] on the properties of DLC films. In our previous works [14, 15], a d.c. glow discharge of plasma sputtering deposition technique was used to synthesize nanocomposite carbon films at low bias voltages source (d.c. bias voltage of 100-400V). It was observed the size of the nanoparticle decreased from 100nm to 20nm following the increase of the bias voltage from 300V to 400V [15]. However, we were not able to study an effect of higher d.c. bias voltage. Main problem was due to the sputtering plasma source would be seriously disturbed by high d.c. bias voltage. In fact, no result is reported for the investigation of an effect of high d.c. bias voltage on the synthesis of DLC films. The present work addressed this problem. The pulsed plasma beam sputtering deposition technique would be used to synthesis of DLC films, and the effect of high d.c. bias voltages and different precursor gases on the properties of DLC films and particles would also be studied. We focused on synthesis of nanostructure, thick DLC films. Optical microscope and Raman scattering were used to characterize the samples. Experimental data indicated, with d.c. bias voltage up to 1000V, smooth and thick DLC films together with few nanoparticles could be obtained. The d.c. bias voltage up to 2000V yielded thicker DLC films around 5 ยต m , but the
surface of films became rough and the size of particles became large. The crystalline properties of these particles were studied. Experimental set-up Growth and characteristics of diamond-like carbon films were conducted at room temperature using plasma sputtering deposition techniques. In order to avoid disturbance from high d.c. bias voltage, pulsed plasma source was used. Penning ty
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